研究キーワード
Device Physics, Reliability, Low Temperature Process, Solution Process, Oxide semiconductors
研究分野
ものづくり技術(機械・電気電子・化学工学) / 電子デバイス、電子機器 / , ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学 / , ナノテク・材料 / 薄膜、表面界面物性 /
研究室概要
ディスプレイ、メモリ、LSIなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。
学術論文
"Droplet-Scale Conversion of Aluminum into Transparent Aluminum Oxide by Low-Voltage Anodization in an Electrowetting System," ACS Langmuir, vol.41, pp184-192, 6 Jan. 2025
Marco Laurence M. Budlayan, Bermundo Juan Paolo Soria, James C. Solano, Mark D. Ilasin, Raphael A. Guerrero, Yukiharu Uraoka
[ doi:10.1021/acs.langmuir.4c03303 ]
"Spectroscopic Analysis of Electrical Phenomena and Oxygen Vacancy Generation for Self-aligned Fully Solution Processed Oxide Thin-Film Transistors," ACS Applied Materials and Interfaces, vol.16, pp60521-60529, 25 Oct. 2024
Krittin Auewattanapun, Bermundo Juan Paolo Soria, Umu Hanifah, Hideki Nakajima, Wanwisa Limphirat, Ratchatee Techapiesancharoenkij, Yukiharu Uraoka
[ doi:10.1021/acsami.4c13142 ]
"Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method," ACS Omega, 15 Jul. 2024
Chuanjun Wu, Bermundo Juan Paolo Soria, Aimi Syairah Safaruddin, Atsuko Yamamoto, Yukiharu Uraoka
[ doi:10.1021/acsomega.4c03922 ]
"Optimizing a-IGZO Source-Gated Transistor Current by Structure Alteration via TCAD Simulation and Experiment," IEEE Transaction on Electron Devices, vol.71, pp2431-2437, 21 Feb. 2024
Pongsakorn Sihapitak, Bermundo Juan Paolo Soria, Eva Bestelink, Radu A. Sporea, Yukiharu Uraoka
[ doi:10.1109/TED.2024.3360019 ]
"Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-FilmTransistors," ACS Applied Electronic Materials, vol.6, pp505-513, 9 Jan. 2024
Candell Grace P. Quino, Bermundo Juan Paolo Soria, Hidenori Kawanishi, Yukiharu Uraoka
[ doi:10.1021/acsaelm.3c01479 ]
"Performance and Stability Enhancement of Fully Solution-Processed a‑InZnO Thin-Film Transistors via Argon Plasma Treatment," ACS Applied Electronic Materials, vol.5, pp5872-5884, 8 Nov. 2023
Umu Hanifah, Bermundo Juan Paolo Soria, Hidenori Kawanishi, Magdaleno R. Vasquez Jr., Mark D. Ilasin, Yukiharu Uraoka
[ doi:10.1021/acsaelm.3c00841 ]
"Continuous-Wave Green Laser Activation of Transparent InZnO Electrodes for Fully Solution-Processed OxideThin-Film Transistors," ACS Applied Electronic Materials, vol.5, pp5986-5994, 24 Oct. 2023
Dianne C. Corsino, Bermundo Juan Paolo Soria, Muhammad Arif Razali, Mutsunori Uenuma, Yukiharu Uraoka
[ doi:10.1021/acsaelm.3c00968 ]
"Novel Two-dimensional Square-structured Diatomic Group-IV Materials: The First-principles Prediction," Physica Scripta, 15 Sep. 2023
Sholihun Sholihun, Diki Purnawati, Bermundo Juan Paolo Soria, Harmon Prayogi, Zohan Syah Fatomi, Sri Hidayati
[ doi:10.1088/1402-4896/acfa3f ]
"High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors," ACS Omega, vol.8, pp29939-29948, 9 Aug. 2023
Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Chuanjun Wu, Mutsunori Uenuma, Atsuko Yamamoto, Mutsumi Kimura, Yukiharu Uraoka
[ doi:10.1021/acsomega.2c08142 ]
"High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors," Journal of Materials Chemistry C, vol.11, pp11688-11696, 8 Aug. 2023
Eva Bestelink, Pongsakorn Sihapitak, Ute Zschieschang, Leslie Askew, John M. Shannon, Bermundo Juan Paolo Soria, Yukiharu Uraoka, Hagen Klauk, Radu A. Sporea
[ doi:10.1039/d3tc02474a ]
"Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment," Journal of Physics D: Applied Physics, vol.56, pp405114, 12 Jul. 2023
Umu Hanifah, Bermundo Juan Paolo Soria, Mutsunori Uenuma, Yukiharu Uraoka
[ doi:10.1088/1361-6463/acdefb ]
"Dissociation-energy calculations of C-multivacancies in diamond: the density-functional-theory study," Japanese Journal of Applied Physics, 17 Apr. 2023
Diki Purnawati, Nurul Fajariah, Harmon Prayogi, Bermundo Juan Paolo Soria, Ari Dwi Nugraheni, Sholihun Sholihun
[ doi:10.35848/1347-4065/accda7 ]
"Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n− Region Under Negative Bias Stress and Light Irradiation," IEEE Electron Device Letters, vol.44, pp765-768, 20 Mar. 2023
Yujiro Takeda, TAKAHASHI Takanori, Ryoko Miyanaga, Bermundo Juan Paolo Soria, Yukiharu Uraoka
[ doi:10.1109/LED.2023.3258960 ]
"Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2Ox)," ACS Applied Electronic Materials, vol.4, pp5838-5846, 2022.11.25
Diki Purnawati, Paul Rossener Regonia, Bermundo Juan Paolo Soria, 池田 和司, 浦岡 行治
[ doi:10.1021/acsaelm.2c01013 ]
"Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors," Materials Science in Semiconductor Processing, vol.146, pp106669, 1 Apr. 2022
Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Michael Paul Aquisay Jallorina, Atsuko Yamamoto, Yukiharu Uraoka
[ doi:10.1016/j.mssp.2022.106669 ]
"High mobility silicon indium oxide thin-film transistor fabrication by sputtering process," Vacuum, vol.199, pp110963, 19 Feb. 2022
S. Arulkumar, S. Parthiban, J. Y. Kwon, Yukiharu Uraoka, Bermundo Juan Paolo Soria, Arka Mukherjee, Bikas C. Das
[ doi:10.1016/j.vacuum.2022.110963 ]
"Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing," Applied Physics Express, vol.15, pp024003-1-024003-6, 20 Jan. 2022
Diki Purnawati, Bermundo Juan Paolo Soria, Yukiharu Uraoka
[ doi:10.35848/1882-0786/ac466a ]
"Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors," Journal of Physics D: Applied Physics, vol.55, pp075102, 4 Nov. 2021
Bermundo Juan Paolo Soria, Ployrung Kesorn, Naofumi Yoshida, Aimi Syairah Safaruddin, Yukiharu Uraoka
[ doi:10.1088/1361-6463/ac3170 ]
"Impact of Mg-level on Lattice-Relaxation in p-AlGaN Hole Source Layer (HSL) and Attempting Excimer Laser Annealing on p-AlGaN HSL of UVB emitters," Nanotechnology, vol.32, pp055702, 11 Nov. 2020
Muhammad Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama
[ doi:10.1088/1361-6528/abbddb ]
"Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation ," IEEE Electron Device Letters, vol.41, pp1372-1375, 24 Jul. 2020
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Naofumi Yoshida, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
"High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-assisted Role Tuning of InZnO," ACS Applied Electronic Materials, vol.2, pp2398-2407, 20 Jul. 2020
Dianne C. Corsino, Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Mami Fujii, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka
"Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C," Journal of Physics D: Applied Physics, vol.53, pp165103-1-10, 15 Apr. 2020
Dianne C Corsino, Juan Paolo S. Bermundo, Mami Fujii, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka
"High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator," ECS J. Solid State Sci. Technol., vol.9, pp025002-1-5, Jan. 2020
Ployrung Kesorn, Juan Paolo Bermundo, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
"Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors," J. Phys. D. Appl. Phys., vol.53, pp45102-1-45102-7, 7 Nov. 2019
Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
[ doi:10.1088/1361-6463/ab5085 ]
"Hot carrier effects in InGaZnO thin-film transistor," Appl. Phys. Express, vol.12, pp094007-1-4, 30 Aug. 2019
Takanori Takahashi, Ryoko Miyanaga, Mami Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka
[ doi:10.7567/1882-0786/ab3c43 ]
"Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing," ECS J. Solid State Sci. Technol., vol.8, ppP388-P391, 2 Jul. 2019
Tengda Lin, Mutsunori Uenuma, Masaaki Furukawa, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka
[ doi:10.7567/1347-4065/ab1604 ]
"Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient," 2019 Display week international symposium. Society of Information display, pp1333-1336, 29 May. 2019
Michael Paul A. Jallorina, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
[ doi:10.1002/sdtp.13181 ]
"High Performance All Solution Processed Oxide Thin-Film Transistor via Photo-induced Semiconductor-to-Conductor Transformation of a-InZnO," 2019 Display week international symposium. Society of Information display, pp30.3 , 29 May. 2019
Bermundo Juan Paolo Soria, Chaiyanan Kulchaisit, Dianne C. Corsino, Aimi Syairah, Mami Fujii, Hiroshi Ikenoue, Yasuaki Ishikawa, Yukiharu Uraoka
[ doi:10.1002/sdtp.12946 ]
"Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression," Jpn. J. Appl. Phys., vol.58, pp090502-1-10, 9 May. 2019
Yukiharu Uraoka, Bermundo Juan Paolo Soria, Mami Fujii, Mutsunori Uenuma, Yasuaki Ishikawa
[ doi:10.7567/1347-4065/ab1604 ]
"Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors," Appl. Phys. Express, vol.12, pp064002-1-064002-5, 8 May. 2019
Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Naofumi Yoshida, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
[ doi:10.7567/1882-0786/ab1726 ]
"Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer," Jpn. J. Appl. Phys., vol.58, pp040907-1-4, 4 Apr. 2019
Yang Liu, Mami Fujii, Shoma Ishida, Yasuaki Ishikawa, Kazumoto Miwa, Shimpei Ono, Bermundo Juan Paolo Soria, Naoyuki Fujita, Yukiharu Uraoka
[ doi:10.7567/1347-4065/ab008c ]
"High Performance Top Gate a-IGZO TFT utilizing Siloxane Hybrid Material as a Gate Insulator," AIP Adv., vol.8, pp095001-1-8, 4 Sep. 2018
Chaiyanan Kulchaisit, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
"Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors," Jpn. J. Appl. Phys., vol.57, pp090306-1-5, 30 Jul. 2018
Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Yukiharu Uraoka
"Self-heating suppressed structure of a-IGZO thin-film transistor," IEEE Electron Dev. Lett., vol.39, pp1322-1325, 12 Jul. 2018
Kahori Kise, Mami Fujii, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka
"Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C," ACS Appl. Mater. Interfaces, vol.10, pp24590-24597, 21 Jun. 2018
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
"Low Temperature Cured Poly-siloxane Passivation for Highly Reliable a-InGaZnO Thin-Film Transistors," Appl. Phys. Lett., vol.112, pp13503-1-5, 21 May. 2018
Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Katsuto Taniguchi, Yukiharu Uraoka
"Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation of amorphous InGaZnO thin-film transistors," Appl. Phys. Express, vol.11, pp061103-1-5, 16 May. 2018
Dianne Corsino, Bermundo Juan Paolo Soria, Mami Fujii, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka
"Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment," Appl. Phys. Lett., vol.112, pp193501-1-5, 10 May. 2018
Michael Paul A. Jallorina, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
"Fluorine incorporation in Solution Processed Poly-siloxane Passivation for Highly Reliable a-InGaZnO Thin-Film Transistors," J. Phys. D: Appl. Phys., vol.51, pp125105-1-8, 2 Mar. 2018
Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Katsuto Taniguchi, Yukiharu Uraoka
"H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing," Applied Physics Letters, vol.110, pp133503-1-133503-5, 28 Mar. 2017
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
"Nano-Crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors," AIP Advances, vol.6, pp065216-1-065216-10, Jun. 2016
Mami Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R. T. Mofrad, Bermundo Juan Paolo Soria, Emi Kawashima, Shigekazu Tomai, Koki Yano, Yukiharu Uraoka
"Effect of fluorine in a gate insulator on the reliability of indium-gallium-zinc oxide thin-film transistors," ECS Journal of Solid State Science and Technology, vol.5, ppN1-N5, Mar. 2016
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Bermundo Juan Paolo Soria, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka
"Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers," Journal of Physics: D Applied Physics, vol.49, pp035102-1-035102-7, Dec. 2015
Bermundo Juan Paolo Soria, Mami Fujii, Toshiaki Nonaka, Ryoichi Ishihara, Hiroshi Ikenoue, Yukiharu Uraoka
"Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation," Journal of Display Technology, vol.12, pp263-267, Sep. 2015
Chaiyanan Kulchaisit, Mami Fujii, Haruka Yamazaki, Bermundo Juan Paolo Soria, Satoru Ishikawa, Takaaki Miyasako, Hiromitsu Katsui, Kei Tanaka, Ken-ichi Hamada, Masahiro Horita, Yukiharu Uraoka
"Highly reliable photosensitive organic-inorganic hybrid passivation layers for a- InGaZnO thin-film transistors," Appl. Phys. Lett., vol.107, pp033504, 21 Jul. 2015
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Mami Fujii, Yukiharu Uraoka
"Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress," ECS Journal of Solid State Science and Technology, vol.3-9, ppQ3001-Q3004, 9 Apr. 2014
Yoshihiro Ueoka, Yasuaki Ishikawa, Bermundo Juan Paolo Soria, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Masahiro Horita, Yukiharu Uraoka
"Effect of Contact Material on Amorphous InGaZnO Thin-Film Transistor Characteristics," Japanese Journal of Applied Physics, vol.53-3S1, pp03CC04-1-03CC04-5, 27 Feb. 2014
Yoshihiro Ueoka, Yasuaki Ishikawa, Bermundo Juan Paolo Soria, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, Yukiharu Uraoka
"Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane," Mater. Res. Soc. Symp. Proc., vol.1633, pp118, 30 Jan. 2014
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Yukiharu Uraoka
"Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors," ECS Journal of Solid State Science and Technology, vol.3-2, ppQ16-Q19, 23 Nov. 2013
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Yukiharu Uraoka
受賞
"Best Poster Award," 18th International Thin-Film Transistor Conference, 29 Mar. 2024
Nu Myat Thazin, Bermundo Juan Paolo Soria, Umu Hanifah, Johannes Richter, Sebastian Geburt, Yukiharu Uraoka
"NAISTプレジデンツフェロー," NAIST, 2024.2.6
Bermundo Juan Paolo Soria
"Best Poster Award," The 23rd International Meeting on Information Display (IMID 2023), 23 Aug. 2023
Candell Grace Quino, Bermundo Juan Paolo Soria, Yukiharu Uraoka
"Student Paper Award," AMFPD 23, 4 Jul. 2023
Umu Hanifah, Bermundo Juan Paolo Soria, Mutsunori Uenuma, 浦岡 行治
"AMFPD-ECS Japan Section Young Researcher Award," ECS Japan Section and AM-FPD Organizing Committee, 7 Jul. 2022
Bermundo Juan Paolo Soria
"令和3年度NAIST学術奨励賞," NAIST 物質創成科学領域, 2022.2.26
Bermundo Juan Paolo Soria
"Outstanding Poster Paper Award," The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021), 18 Nov. 2021
Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Atsuko Yamamoto, Mutsunori Uenuma, Yukiharu Uraoka
"Outstanding Reviewer Award," IOP Applied Physics Express, 28 Apr. 2021
Bermundo Juan Paolo Soria
"第42回(2020年度)応用物理学会論文奨励賞," 応用物理学会, 2020.9
Takanori Takahashi, Ryoko Miyanaga, Mami Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Juan Paolo Bermundo, Yasuaki Ishikawa, Yukiharu Uraoka
"Outstanding Reviewer Award 2018," IOP Journal of Semiconductor Science and Technology, Mar. 2019
Bermundo Juan Paolo Soria
"Best Presenter Award," 1st International Conference on Materials Science and Engineering in the Philippines (ICMSEP 2018), 26 Oct. 2018
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
"ゲートおよびドレイン電界印加による非晶質IGZO薄膜トランジスタの微小発光現象," 薄膜材料デバイス研究会 第14回研究集会, 2017.10.21
藤井 茉美, Bermundo Juan Paolo Soria, 石河 泰明, 浦岡 行治
"Poster Award," The 17th International Meeting on Information Display, 31 Aug. 2017
Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
"Student Paper Award," EM-NANO2017, 21 Jun. 2017
Dianne Corsino, Bermundo Juan Paolo Soria, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka
"ポスター賞," 応用物理学会, 2016.9.14
木瀬香保利, 藤井 茉美, Bermundo Juan Paolo Soria, 石河 泰明, 浦岡 行治
"Outstanding Poster Paper Award," International Display Workshops, Dec. 2015
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Bermundo Juan Paolo Soria, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka
"Outstanding Poster Paper Award," International Display Workshops 2015, Dec. 2015
Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami Fujii, Haruka Yamazaki, Bermundo Juan Paolo Soria, Yukiharu Uraoka
"IEEE EDS Kansai Chapter IMFEDK Best Paper Award ," 2014 International Meeting for Future of Electron Devices, Kansai, 20 Jun. 2014
Chaiyanan Kulchaisit, Mami Fujii, Yoshihiro Ueoka, Bermundo Juan Paolo Soria, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
"第35回(2013年秋季)応用物理学会講演奨励賞受賞," 第74回応用物理学会秋季学術講演会, 2013.9.17
上岡義弘, 石河泰明, Bermundo Juan Paolo Soria, 山﨑はるか, 浦川哲, 長田至弘, 堀田昌宏, 浦岡行治
所属学協会
SID
MRS
応用物理学会
資料

浦岡 行治

職位 教授
領域 物質創成科学領域 基幹研究室
研究室 情報機能素子科学

ディスプレイ、メモリ、LSIなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。

高橋 崇典

職位 助教
領域 物質創成科学領域 基幹研究室
研究室 情報機能素子科学

ディスプレイ、メモリ、LSIなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。