奈良先端科学技術大学院大学教員研究活動データベース

浦岡　行治

所属	物質創成科学領域基幹研究室
職位	教授
学位
研究室	情報機能素子科学

研究キーワード	ディスプレイ工学, 半導体工学, Semiconductor
研究分野	ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 / , ものづくり技術（機械・電気電子・化学工学） / 電気電子材料工学 /
研究室概要	ディスプレイ、メモリ、ＬＳＩなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。
学術論文	"Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application," APM Materials, vol.13, pp051101, 1 May. 2025 TAKAHASHI Takanori, Mutsunori Uenuma, Masaharu Kobayashi, Yukiharu Uraoka [ doi:10.1063/5.0243670 ] "Droplet-Scale Conversion of Aluminum into Transparent Aluminum Oxide by Low-Voltage Anodization in an Electrowetting System," ACS Langmuir, vol.41, pp184-192, 6 Jan. 2025 Marco Laurence M. Budlayan, Bermundo Juan Paolo Soria, James C. Solano, Mark D. Ilasin, Raphael A. Guerrero, Yukiharu Uraoka [ doi:10.1021/acs.langmuir.4c03303 ] "Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method," Applied Physics Express, vol.18, pp014001, 6 Jan. 2025 TAKAHASHI Takanori, Yukiharu Uraoka [ doi:10.35848/1882-0786/ada19e ] "Spectroscopic Analysis of Electrical Phenomena and Oxygen Vacancy Generation for Self-aligned Fully Solution Processed Oxide Thin-Film Transistors," ACS Applied Materials and Interfaces, vol.16, pp60521-60529, 25 Oct. 2024 Krittin Auewattanapun, Bermundo Juan Paolo Soria, Umu Hanifah, Hideki Nakajima, Wanwisa Limphirat, Ratchatee Techapiesancharoenkij, Yukiharu Uraoka [ doi:10.1021/acsami.4c13142 ] "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling," IEEE Transactions on Electron Devices, vol.71, pp7509-7515, 18 Oct. 2024 Xingyu Huang, Kaito Hikake, Sung-Hun Kim, Kota Sakai, Zhuo Li, Tomoko Mizutani, Takuya Saraya, Toshiro Hiramoto, 髙橋　崇典, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi [ doi:10.1109/TED.2024.3473888 ] "Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method," ACS Omega, 15 Jul. 2024 Chuanjun Wu, Bermundo Juan Paolo Soria, Aimi Syairah Safaruddin, Atsuko Yamamoto, Yukiharu Uraoka [ doi:10.1021/acsomega.4c03922 ] "A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices," IEEE Transactions on Electron Devices, vol.71, pp2373-2379, 14 Mar. 2024 Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, TAKAHASHI Takanori, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi [ doi:10.1109/TED.2024.3370534 ] "Dual Role of AgNO3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-FilmTransistors," ACS Applied Electronic Materials, vol.6, pp505-513, 9 Jan. 2024 Candell Grace P. Quino, Bermundo Juan Paolo Soria, Hidenori Kawanishi, Yukiharu Uraoka [ doi:10.1021/acsaelm.3c01479 ] "Performance and Stability Enhancement of Fully Solution-Processed a‑InZnO Thin-Film Transistors via Argon Plasma Treatment," ACS Applied Electronic Materials, vol.5, pp5872-5884, 8 Nov. 2023 Umu Hanifah, Bermundo Juan Paolo Soria, Hidenori Kawanishi, Magdaleno R. Vasquez Jr., Mark D. Ilasin, Yukiharu Uraoka [ doi:10.1021/acsaelm.3c00841 ] "Continuous-Wave Green Laser Activation of Transparent InZnO Electrodes for Fully Solution-Processed OxideThin-Film Transistors," ACS Applied Electronic Materials, vol.5, pp5986-5994, 24 Oct. 2023 Dianne C. Corsino, Bermundo Juan Paolo Soria, Muhammad Arif Razali, Mutsunori Uenuma, Yukiharu Uraoka [ doi:10.1021/acsaelm.3c00968 ] "High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors," ACS Omega, vol.8, pp29939-29948, 9 Aug. 2023 Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Chuanjun Wu, Mutsunori Uenuma, Atsuko Yamamoto, Mutsumi Kimura, Yukiharu Uraoka [ doi:10.1021/acsomega.2c08142 ] "High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors," Journal of Materials Chemistry C, vol.11, pp11688-11696, 8 Aug. 2023 Eva Bestelink, Pongsakorn Sihapitak, Ute Zschieschang, Leslie Askew, John M. Shannon, Bermundo Juan Paolo Soria, Yukiharu Uraoka, Hagen Klauk, Radu A. Sporea [ doi:10.1039/d3tc02474a ] "Interface State Density Prediction between an Insulator and a Semiconductor by Gaussian Process Regression Models for a Modified Process," ACS Omega, vol.8, no.30, pp27458-27466, 18 Jul. 2023 Kanta Matsunaga, Takuto Harada, Shintaro Harada, Akinori Sato, Shota Terai, Mutsunori Uenuma, Tomoyuki Miyao, Yukiharu Uraoka "Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment," Journal of Physics D: Applied Physics, vol.56, pp405114, 12 Jul. 2023 Umu Hanifah, Bermundo Juan Paolo Soria, Mutsunori Uenuma, Yukiharu Uraoka [ doi:10.1088/1361-6463/acdefb ] "Degradation Due to Photo-Induced Electron in Top-Gate In-Ga-Zn-O Thin Film Transistors With n− Region Under Negative Bias Stress and Light Irradiation," IEEE Electron Device Letters, vol.44, pp765-768, 20 Mar. 2023 Yujiro Takeda, TAKAHASHI Takanori, Ryoko Miyanaga, Bermundo Juan Paolo Soria, Yukiharu Uraoka [ doi:10.1109/LED.2023.3258960 ] "Atomic Imaging of Interface Defects in an Insulating Film on Diamond," Nano Lett.2023, vol.23, pp1189-1194, 10 Feb. 2023 Mami N. Fujii, Masaki Tanaka, Takumi Tsuno, Yusuke Hashimoto, Hiroto Tomita, Soichiro Takeuchi, Shunjo Koga, Zexu Sun, John Isaac Enriquez, Yoshitada Morikawa, Jun Mizuno, Mutsunori Uenuma, Yukiharu Uraoka, Tomohiro Matsushita [ doi:10.1021/acs.nanolett.2c04176 ] "Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2Ox)," ACS Applied Electronic Materials, vol.4, pp5838-5846, 2022.11.25 Diki Purnawati, Paul Rossener Regonia, Bermundo Juan Paolo Soria, 池田　和司, 浦岡　行治 [ doi:10.1021/acsaelm.2c01013 ] "Atomic structure analysis of gallium oxide at the Al2O3/GaN interface using photoelectron holography," Applied Physics Express, vol.15, pp085501-1-085501-4, 13 Jul. 2022 Mutsunori Uenuma, Shingo Kuwaharada, Hiroto Tomita, Masaki Tanaka, Zexu Sun, Yusuke Hashimoto, Mami N.Fujii, Tomohiro Matsushita, Yukiharu Uraoka [ doi:10.35848/1882-0786/ac7dd9 ] "A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide," IEEE ELECTRON DEVICE LETTERS, vol.43, pp1227-1230, 20 Jun. 2022 Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi [ doi:10.1109/LED.2022.3184316 ] "Orientation dependent etching of polycrystalline diamond by hydrogen plasma," Applied Physics Letters, vol.121, pp021903-1-021903-6, 14 Jun. 2022 Daichi Yoshii, Mami N. Fujii, Yukiharu Uraoka [ doi:10.1063/5.0090715 ] "Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure," Japanese Journal of Applied Physics, vol.61, pp065502-1-065502-7, 24 May. 2022 Takuya Shibata, Takahiro Yamada, Koji Yoshitsugu, Masato Higashi, Kunihiko Nishimura, Yukiharu Uraoka [ doi:10.35848/1347-4065/ac646d ] "Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors," Materials Science in Semiconductor Processing, vol.146, pp106669, 1 Apr. 2022 Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Michael Paul Aquisay Jallorina, Atsuko Yamamoto, Yukiharu Uraoka [ doi:10.1016/j.mssp.2022.106669 ] "High mobility silicon indium oxide thin-film transistor fabrication by sputtering process," Vacuum, vol.199, pp110963, 19 Feb. 2022 S. Arulkumar, S. Parthiban, J. Y. Kwon, Yukiharu Uraoka, Bermundo Juan Paolo Soria, Arka Mukherjee, Bikas C. Das [ doi:10.1016/j.vacuum.2022.110963 ] "Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing," Applied Physics Express, vol.15, pp024003-1-024003-6, 20 Jan. 2022 Diki Purnawati, Bermundo Juan Paolo Soria, Yukiharu Uraoka [ doi:10.35848/1882-0786/ac466a ] "Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors," Journal of Physics D: Applied Physics, vol.55, pp075102, 4 Nov. 2021 Bermundo Juan Paolo Soria, Ployrung Kesorn, Naofumi Yoshida, Aimi Syairah Safaruddin, Yukiharu Uraoka [ doi:10.1088/1361-6463/ac3170 ] "Improved Thermoelectric Power Factor of InGaZnO/SiO2 Thin Film Transistor via Gate-Tunable Energy Filtering," IEEE ELECTRON DEVICE LETTERS, vol.42, pp1236-1239, 28 Jun. 2021 Jenichi Clairvaux Felizco, Mami N. Fujii, Yukiharu Uraoka [ doi:10.1109/LED.2021.3093036 ] "Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator," Applied Physics Letters, vol.118, pp151601-1-151601-6, 15 Apr. 2021 Takafumi Ishibe, Atsuki Tomeda, Yuki Komatsubara, Reona Kitaura, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Yoshiaki Nakamura [ doi:10.1063/5.0048577 ] "Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation ," IEEE Electron Device Letters, vol.41, pp1372-1375, 24 Jul. 2020 Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Naofumi Yoshida, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka "High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-assisted Role Tuning of InZnO," ACS Applied Electronic Materials, vol.2, pp2398-2407, 20 Jul. 2020 Dianne C. Corsino, Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Mami Fujii, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka "Hierarchical Core–Shell Heterostructure of H2O-oxidized ZnO Nanorod@Mg-doped ZnO Nanoparticle for Solar Cell Applications," Materials Advances, vol.1, pp1253-1261, 1 Jul. 2020 Christian Mark Pelicano, Itaru Raifuku, Yasuaki Ishikawa, Yukiharu Uraoka, Hisao Yanagi [ doi:10.1039/d0ma00313a ] "Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation," Applied Surface Science, vol.527, pp146791-1-146791-8, 25 May. 2020 Jenichi Clairvaux Felizco, Yasuaki Ishikawa, Yukiharu Uraoka [ NAISTレポジトリ ] "Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors," Applied Physics Express, vol.13, pp054003, 1 May. 2020 Takanori Takahashi, Mami Fujii, Ryoko Miyanaga, Miki Miyanaga, Yasuaki Ishikawa, Yukiharu Uraoka "Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C," Journal of Physics D: Applied Physics, vol.53, pp165103-1-10, 15 Apr. 2020 Dianne C Corsino, Juan Paolo S. Bermundo, Mami Fujii, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka "Elucidating the mechanism of potential induced degradation delay effect by ultraviolet light irradiation for p-type crystalline silicon solar cells," Solar Energy, vol.199, pp55-62, 15 Mar. 2020 Nguyen Chung Dong, Yasuaki Ishikawa, Sachiko Jonai, Kyotaro Nakamura, Atsushi Masuda, Yukiharu Uraoka "Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor," ACS Applied Electronic Materials, vol.2, pp405-408, 6 Feb. 2020 Yuki Hashima, Takanori Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka "High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator," ECS J. Solid State Sci. Technol., vol.9, pp025002-1-5, Jan. 2020 Ployrung Kesorn, Juan Paolo Bermundo, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka "Evaluate Fixed Charge and Oxide-Trapped Charge on SiO2/GaN Metal-Oxide-Semiconductor Structure Before and After Postannealing," Physica Status Solidi B, vol.190044, pp1-6, 14 Dec. 2019 Masaaki Furukawa, Yasuaki Ishikawa, Yukiharu Uraoka [ NAISTレポジトリ ] "The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface," Physuca status solidi b, vol.1900368, pp1-6, 2 Dec. 2019 Mutsunori Uenuma, Ryota Ando, Masaaki Furukawa, Yukiharu Uraoka [ NAISTレポジトリ ] "Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors," J. Phys. D. Appl. Phys., vol.53, pp45102-1-45102-7, 7 Nov. 2019 Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka [ doi:10.1088/1361-6463/ab5085 ] "Segregation-free bromine-doped perovskite solar cells for IoT applications," RSC Adv., vol.9, pp32833-32838, 10 Oct. 2019 Itaru Raifuku, Yasuaki Ishikawa, Yu-Hsien Chiang, Pei-Ying Lin, Ming-Hsien Li, Yukiharu Uraoka, Peter Chen [ doi:10.1039/c9ra05323a ] "Hot carrier effects in InGaZnO thin-film transistor," Appl. Phys. Express, vol.12, pp094007-1-4, 30 Aug. 2019 Takanori Takahashi, Ryoko Miyanaga, Mami Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.7567/1882-0786/ab3c43 ] "Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing," ECS J. Solid State Sci. Technol., vol.8, ppP388-P391, 2 Jul. 2019 Tengda Lin, Mutsunori Uenuma, Masaaki Furukawa, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.7567/1347-4065/ab1604 ] "Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient," 2019 Display week international symposium. Society of Information display, pp1333-1336, 29 May. 2019 Michael Paul A. Jallorina, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.1002/sdtp.13181 ] "High Performance All Solution Processed Oxide Thin-Film Transistor via Photo-induced Semiconductor-to-Conductor Transformation of a-InZnO," 2019 Display week international symposium. Society of Information display, pp30.3 , 29 May. 2019 Bermundo Juan Paolo Soria, Chaiyanan Kulchaisit, Dianne C. Corsino, Aimi Syairah, Mami Fujii, Hiroshi Ikenoue, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.1002/sdtp.12946 ] "Removing process of the three-dimension periodic nanostructure fabricated from KMPR photoresist," Jpn. J. Appl. Phys., vol.58, ppSDDF08-1-7, 16 May. 2019 Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Mutsunori Uenuma, Yukiharu Uraoka [ doi:10.7567/1347-4065/ab0dea ] "Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression," Jpn. J. Appl. Phys., vol.58, pp090502-1-10, 9 May. 2019 Yukiharu Uraoka, Bermundo Juan Paolo Soria, Mami Fujii, Mutsunori Uenuma, Yasuaki Ishikawa [ doi:10.7567/1347-4065/ab1604 ] "Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors," Appl. Phys. Express, vol.12, pp064002-1-064002-5, 8 May. 2019 Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Naofumi Yoshida, Toshiaki Nonaka, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.7567/1882-0786/ab1726 ] "Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer," Jpn. J. Appl. Phys., vol.58, pp040907-1-4, 4 Apr. 2019 Yang Liu, Mami Fujii, Shoma Ishida, Yasuaki Ishikawa, Kazumoto Miwa, Shimpei Ono, Bermundo Juan Paolo Soria, Naoyuki Fujita, Yukiharu Uraoka [ doi:10.7567/1347-4065/ab008c ] "Physical and electrical properties of ALD-Al2O3/GaN MOS capacitor annealed with high pressure water vapor," Jpn. J. Appl. Phys., vol.58, pp040902-1--6, 27 Mar. 2019 Yuta Fujimoto, Mutsunori Uenuma, Tsubasa Nakamura, Masaaki Furukawa, Yasuaki Ishikawa, Yukiharu Uraoka [ doi:10.7567/1347-4065/ab09a2 ] "Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial," Jpn. J. Appl. Phys., vol.57, pp125003-1-4, 5 Nov. 2018 Takahiko Ban, Shinji Migita, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita, Shin-ichi Yamamoto [ doi:10.7567/JJAP.57.125003 ] "The optical properties of silicon-rich-silion nitride prepared by plasma-enhanced chemical vapor deposition," Materials Science in Semiconductor Processing, vol.90, pp54-58, 12 Oct. 2018 Seiya Yoshinaga, Yasuaki Ishikawa, Yusuke Kawamura, Yuya Nakai, Yukiharu Uraoka "Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics," AIP Advances, vol.8,105103, pp1-5, 4 Oct. 2018 Mutsunori Uenuma, Kiyoshi Takahashi, Sho Sonehara, Yuta Tominaga, Yuta Fujimoto, Yasuaki Ishikawa, Yukiharu Uraoka "SrTa2O6 Induced Low Voltage Operation of InGaZnO Thin-Film Transistors," Thin Solid Films, vol.665, pp173-178, 12 Sep. 2018 Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kiyoshi Uchiyama "Properties of TlZnSnO film fabricated via sputtering from TlZnSnO target," J. Phys. D: Appl. Phys., vol.51, pp415103-1-7, 7 Sep. 2018 Katsushi Kishimoto, Yasuaki Ishikawa, Mami Fujii, Yoshitaro Nose, Yukiharu Uraoka "High Performance Top Gate a-IGZO TFT utilizing Siloxane Hybrid Material as a Gate Insulator," AIP Adv., vol.8, pp095001-1-8, 4 Sep. 2018 Chaiyanan Kulchaisit, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka "The influence of sodium ion decorated micro-cracks on the evolution of potential induced degradation in p-type crystalline silicon solar cells," Solar Energy, vol.174, pp1-6, 1 Sep. 2018 Nguyen Chung Dong, Mohammad Aminul Islam, Yasuaki Ishikawa, Yukiharu Uraoka "Easy and green preparation of a graphene–TiO2 nanohybrid using a supramolecular biomaterial consisted of artificially bifunctionalized proteins and its application for a perovskite solar cell," Nanoscale, vol.10, pp19249-19253, 10 Aug. 2018 Yuki Hashima, Yasuaki Ishikawa, Itaru Raifuku, Ippei Inoue, Naofumi Okamoto, Ichiro Yamashita, Tsuyoshi Minami, Yukiharu Uraoka "Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors," Jpn. J. Appl. Phys., vol.57, pp090306-1-5, 30 Jul. 2018 Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Yukiharu Uraoka "Self-heating suppressed structure of a-IGZO thin-film transistor," IEEE Electron Dev. Lett., vol.39, pp1322-1325, 12 Jul. 2018 Kahori Kise, Mami Fujii, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka "Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C," ACS Appl. Mater. Interfaces, vol.10, pp24590-24597, 21 Jun. 2018 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka "Low Temperature Cured Poly-siloxane Passivation for Highly Reliable a-InGaZnO Thin-Film Transistors," Appl. Phys. Lett., vol.112, pp13503-1-5, 21 May. 2018 Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Katsuto Taniguchi, Yukiharu Uraoka "Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation of amorphous InGaZnO thin-film transistors," Appl. Phys. Express, vol.11, pp061103-1-5, 16 May. 2018 Dianne Corsino, Bermundo Juan Paolo Soria, Mami Fujii, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka "One-dimensional array of gold nanoparticles fabricated using biotemplate and its application to fine FET," Jpn. J. Appl. Phys., vol.57, pp06HC05-1-5, 11 May. 2018 Takahiko Ban, Mutsunori Uenuma, Shinji Migita, Naofumi Okamoto, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita, Shin-ichi Yamamoto "Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment," Appl. Phys. Lett., vol.112, pp193501-1-5, 10 May. 2018 Michael Paul A. Jallorina, Bermundo Juan Paolo Soria, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka "Fluorine incorporation in Solution Processed Poly-siloxane Passivation for Highly Reliable a-InGaZnO Thin-Film Transistors," J. Phys. D: Appl. Phys., vol.51, pp125105-1-8, 2 Mar. 2018 Naofumi Yoshida, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Toshiaki Nonaka, Katsuto Taniguchi, Yukiharu Uraoka "Alterations in Ambipolar Characteristic of Graphene due to Adsorption of Escherichia coli Bacteria," J. Phys. D: Appl. Phys., vol.51, pp115102-1-8, 22 Feb. 2018 Yana Mulyana, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2O6 as Gate Insulator Deposited by Sputtering Method," Physica status solidi A, pp1700773-1-5, 14 Feb. 2018 Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Kendo Oikawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kiyoshi Uchiyama "Effect of Inversion Layer at Iron Pyrite Surface on Photovoltaic Device," Jpn. J. Appl. Phys., vol.57, pp032301-1-7, 9 Feb. 2018 Shunsuke Uchiyama, Yasuaki Ishikawa, Yukiharu Uraoka "新しい材料の探索・創成・開発~分子・物質合成プラットフォームの紹介~(下)NAISTナノテクプラットフォームにおけるホットトピックス―ナノ構造熱電変換材料の新潮流," 金属, vol. 88, pp 118-124, 2018.2.1 上沼　睦典, 浦岡　行治, 中村　雅一, 野々口　斐之, 清水　洋, 河合　壯 "NAISTナノテクプラットフォームにおけるホットトピックス〜ナノ構造熱電変換材料の新潮流〜," 金属, vol.88, pp118-124, 2018.2 上沼睦典, 浦岡行治, 中村雅一, 野々口斐之, 清水洋, 河合壯 "Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin," Japanese Journal of Applied Physics, vol.57, pp02CB06-1-02CB06-7, 19 Dec. 2017 Mototaka Ochi, Aya Hino, Hiroshi Goto, Kazushi Hayashi, Mami N. Fujii, Yukiharu　Uraoka, Toshihiro Kugimiya "Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature," Thin Solid Films, vol.646, pp209-215, 6 Dec. 2017 Song Zhang, Itaru Raifuku, Tiphaine Bourgeteau, Yvan Bonnassieux, Erik Johnson, Yasuaki Ishikawa, Martin Foldyna, Pere Roca i Cabarrocas, Yukiharu Uraoka "Low surface reflectance by nanoimprinted-texture with silicon-rich-silicon nitride layer," Jpn. J. Appl. Phys., vol.50, pp455108-1-7, 23 Oct. 2017 Seiya Yoshinaga, Yasuaki Ishikawa, Yukiharu Uraoka "Fabrication of amorphous InGaZnO thin-film transistor with solution processed SrZrO3 gate insulator," AIP Conference Proceedings, vol.1892, pp150003, Oct. 2017 Takanori Takahashi, Kento Oikawa, Takeshi Hoga, Yukiharu Uraoka, Kiyoshi Uchiyama "Biotemplated synthesis of TiO2 coated gold nanowire for perovskite solar cells," ACS Omega, vol.2, pp5478-5485, 6 Sep. 2017 Ippei Inoue, Yuki Umemura, Itaru Raifuku, Kenichi Toyoda, Yasuaki Ishikawa, Seigo Ito, Hisashi Yasueda, Yukiharu Uraoka, Ichiro Yamashita "Effect of gold nanoparticle distribution in TiO2 on the optical and electrical characteristics of dye-sensitized solar cells," Nanoscale Research Letters, vol.12, pp513-1-513-12, 29 Aug. 2017 Shuichi Mayumi, Yutaka Ikeguchi, Daisuke Nakane, Yasuaki Ishikawa, Yukiharu Uraoka, Mamoru Ikeguchi "Fabrication of perovskite solar cells using sputter-processed CH3NH3PbI3 films," Applied Physics Express, vol.10, pp094101-1-094101-3, 18 Aug. 2017 Itaru Raifuku, Yasuaki Ishikawa, Tiphaine Bourgeteau, Yvan Bonnassieux, Pere Roca i Cabarrocas, Yukiharu Uraoka "Growth of InGaZnO Nanowires via Mo/Au-catalyzed Vapor-Liquid-Solid Process from Amorphous Thin Film," Applied Physics Letters, vol.111, pp033104-1-033104-4, 18 Jul. 2017 Jenichi Clairvaux Felizco, Mutsunori Uenuma, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka "Fabrication of Nanoshell-based 3D Periodic Structures by Templating Process using Solution-derived ZnO," Nanoscale Research Letters, vol.12, pp419-1-419-9, 17 Jun. 2017 Shinji Araki, Yasuaki Ishikawa, Xundongfang Wang, Mutsunori Uenuma, Donghwi Cho, Seokwoo Jeon, Yukiharu Uraoka "One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins," Japanese Journal of Applied Physics, vol.56, pp06GG11-1-06GG11-6, 24 May. 2017 Takahiko Ban, Mutsunori Uenuma, Shinji Migita, Naofumi Okamoto, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita, Shin-ichi Yamamoto "Solution-derived SiO2 Gate Insulator Formed by CO2 Laser Annealing for Polycrystalline Silicon Thin-film Transistors," Japanese Journal of Applied Physics, vol.56, pp056503-1-056503-5, 24 Apr. 2017 Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka "H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing," Applied Physics Letters, vol.110, pp133503-1-133503-5, 28 Mar. 2017 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka "Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate," Japanese Journal of Applied Physics, vol.56, pp03BB05-1-03BB05-6, 14 Feb. 2017 Takahiko Ban, Shinji Migita, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita, Shin-ichi Yamamoto "Numerical Analysis of Monocrystalline Silicon Solar Cell Having Fine Nanoimprinted-Texture Surface," Japanese Journal of Applied Physics, vol.56, pp022301-1-022301-7, 11 Jan. 2017 Seiya Yoshinaga, Yasuaki Ishikawa, Yukiharu Uraoka "Photomechanical modification of ZnS microcrystal to enhance electroluminescence by ultrashort-pulse laser processing," Applied Physics Express, vol.10, pp021201-1-021201-4, 6 Jan. 2017 Kyohei Nabesaka, Yukiharu Uraoka [ NAISTレポジトリ ] "Interface Optoelectronics Engineering for Mechanial-Stached Tandem Solar Cells Based on Perovskite and Silicon," ACS Applied Materials and Interfaces, vol.8, pp33553-33561, 31 Oct. 2016 Hiroyuki Kanda, Abdullah Uzum, Hitoshi Nishino, Tomokazu Umeyama, Hiroshi Imahori, Yasuaki Ishikawa, Yukiharu Uraoka, Seigo Ito "Thermoelectric Devices Fabricated Using Amorphous Indium Gallium Zinc Oxide," ECS Transactions, vol.75, pp213-216, Sep. 2016 Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing Organic, Ge- and SiGe- Based Materials for TFTs," ESC Transactions, vol.75, pp87-94, Sep. 2016 Masahiro Horita, Toru Takao, Yoshiaki Nieda, Yasuaki Ishikawa, Nobuo Sasaki, Yukiharu Uraoka "Characteristics of Perovskite Solar Cells under Low-Illuminance Conditions," Journal of Physical Chemistry C, vol.120, pp18986-18990, Aug. 2016 Itaru Raifuku, Seigo Ito, Yukiharu Uraoka "ナノインプリント法によるZnOフォトニック結晶の作製," 日本セラミックス協会誌、2016年8月号特集「セラミックスウェットコーティングの新たな潮流」, pp511-513, 2016.8 石河　泰明, 浦岡　行治 "Nano-Crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors," AIP Advances, vol.6, pp065216-1-065216-10, Jun. 2016 Mami Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R. T. Mofrad, Bermundo Juan Paolo Soria, Emi Kawashima, Shigekazu Tomai, Koki Yano, Yukiharu Uraoka "Al2O3/TiO2 double layer anti-reflection coating film for crystalline silicon solar cells formed by spray pyrolysis," Energy Science and Engineering, vol.4, pp269-276, May. 2016 Hiroyuki Kanda, Abdullah Uzum, Norihisa Harano, Seiya Yoshinaga, Yasuaki Ishikawa, Yukiharu Uraoka, Hidehito Fukui, Tomitaro Harada, Seigo Ito "Influence of Nickel Catalyst Film Thickness and Cooling Condition for Synthesis of Monolayer Graphene by Thermal Chemical Vapor Deposition at 800 º C ," Journal of Materials Science and Engineering B, vol.5, pp341-346 , 1 Apr. 2016 Kazunori Ichikawa, Hiroshi Akamatsu, Yoshiyuki Suda, 野々口　斐之, 浦岡　行治 "Selection of a novel peptide aptamer with high affinity for TiO2-nanoparticle through a direct electroporation with TiO2-binding phage complexes," Journal of Bioscience and Bioengineering, vol.122, pp528-532, Apr. 2016 Ippei Inoue, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita, Hisashi Yasueda "Improvement of Thermoelectric Properties of a-InGaZnO Thin Film by Optimizing Carrier Concentration," Journal of Electronic Materials, vol.45, pp1377-1341, Mar. 2016 Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "Effect of fluorine in a gate insulator on the reliability of indium-gallium-zinc oxide thin-film transistors," ECS Journal of Solid State Science and Technology, vol.5, ppN1-N5, Mar. 2016 Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Bermundo Juan Paolo Soria, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka "Creating reversible p-n junction on graphene through ferritin absorption," ACS Applied Materials and Interfaces, vol.8, pp8192-8200, Mar. 2016 Yana Mulyana, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "イオン液体をゲート絶縁膜として用いた高信頼性IGZO-TFTの開発," 月刊「機能材料」、2016年3月号特集「イオン液体をデザインする―多機能化への挑戦―」, pp36-42, 2016.3 石河　泰明, 藤井　茉美, 小野新平, 浦岡　行治 "低吸水性パッシベーション層を適用したアモルファスIGZO薄膜トランジスターの信頼性について," JSR TECHNICAL REVIEW, pp9-14, 2016.3 石川暁, 宮迫毅明, 勝井宏光, 田中圭, 濱田謙一, Chaiyanan Kulchaisit, 藤井　茉美, 石河　泰明, 浦岡　行治 "Reactivity and stability of thallium oxide for fabricating TlSnZnO toward thin-film transistors with high mobility," Journal of Alloys and Compaunds, vol.672, pp413-418, Feb. 2016 Katsushi Kishimoto, Yoshitaro Nose, Mami Fujii, Yukiharu Uraoka "Self-heating induced instability of oxide thin film transistors under dynamic stress," Applied Physics Letters, vol.108, pp023501-1-023501-4, Jan. 2016 Kahori Kise, Satoshi Urakawa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, Dapeng Wang, Mamoru Furuta, Yasuaki Ishikawa, Yukiharu Uraoka "Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers," Journal of Physics: D Applied Physics, vol.49, pp035102-1-035102-7, Dec. 2015 Bermundo Juan Paolo Soria, Mami Fujii, Toshiaki Nonaka, Ryoichi Ishihara, Hiroshi Ikenoue, Yukiharu Uraoka "Highly-density carrier accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric," Scientific Reports, vol.5, pp18168-1-18168-6, Dec. 2015 Mami Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Hiromi Okada, Yukiharu Uraoka, Shimpei Ono "Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration," AIP Advances, vol.5, pp097209-1-097209-6, Sep. 2015 Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation," Journal of Display Technology, vol.12, pp263-267, Sep. 2015 Chaiyanan Kulchaisit, Mami Fujii, Haruka Yamazaki, Bermundo Juan Paolo Soria, Satoru Ishikawa, Takaaki Miyasako, Hiromitsu Katsui, Kei Tanaka, Ken-ichi Hamada, Masahiro Horita, Yukiharu Uraoka "Joule heating effect in nonpolar and bipolar resistive random access memory," Appl. Phys. Lett., vol.107, pp073503, 17 Aug. 2015 Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "Highly reliable photosensitive organic-inorganic hybrid passivation layers for a- InGaZnO thin-film transistors," Appl. Phys. Lett., vol.107, pp033504, 21 Jul. 2015 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Mami Fujii, Yukiharu Uraoka "Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate," Appl. Phys. Lett., vol.106, pp253104, 23 Jun. 2015 Takahiko Ban, Mutsunori Uenuma, Shinji Migita, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Thermo-stable carbon nanotube-TiO2 nanocompsite as electron highways in dyesensitized solar cell produced by bio-nanoprocess," Nanotechnology, vol.26, pp285601, Jun. 2015 Ippei Inoue, Hirofumi Yamauchi, Naofumi Okamoto, Kenichi Toyoda, Masahiro Horita, Yasuaki Ishikawa, Hisashi Yasueda, Yukiharu Uraoka, Ichiro Yamashita "Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing," ECS Transactions, vol.67, pp205-210, Jun. 2015 Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Comparison between Effects of PECVD-SiOx and Thermal ALD-AlOx Passivation Layers on Characteristics of Amorphous InGaZnO TFTs," ECS J. Solid State Sci. Technol., vol.4, ppQ61-Q65, May. 2015 Jun Tanaka, Yoshihiro Ueoka, Koji Yotshitsugu, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kazushige Takechi, Horoshi Tanabe "Floating Gate Memory with Charge Storage Dots Array Formed by Dps Protein Modified with Site-specific Binding Peptides," Nanotechnology, vol.26, pp195201, 21 Apr. 2015 Hiroki Kamitake, Mutsunori Uenuma, Naofumi Okamoto, Masahiro Horita, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Silica-Sol-Based Spin-Coating Barrier Layer Against Phosphorous Diffusion for Crystalline Silicon Solar Cells," Nanoscale Research Letters, vol.9, pp659-666, 5 Dec. 2014 Abdullah Uzum, Ken Fukatsu, Hiroyuki Kanda, Yutaka Kimura, Kenji Tanimoto, Seiya Yoshinaga, Yunjian Jiang, Yasuaki Ishikawa, Yukiharu Uraoka, Seigo Ito "A Distance-Controlled Nanoparticle Array Using PEGylated Ferritin," Materials Research Express, vol.1, pp45410-1-45410-9, 24 Nov. 2014 Chao He, Mutsunori Uenuma, Naofumi Okamoto, Hiroki Kamitake, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Reversible oxidation of graphene through ultraviolet/ozone treatment and its non-thermal reduction through ultraviolet irradiation," J. Phys. Chem. C, vol.118, pp27372-27381, 5 Nov. 2014 Yana Mulyana, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "Highly Stable Dye-Sensitized Solar Cells with Quasi-Solid-State Electrolyte Based on Flemion," Solar Energy, vol.100, pp648-655, 27 Oct. 2014 Shuichi Mayumi, Yutaka Ikeguchi, Daisuke Nakane, Yasuaki Ishikawa, Yukiharu Uraoka, Mamoru Ikeguchi "Thermal Analysis for Observing Conductive Filaments in Amorphous InGaZnO Thin Film Resistive Switching Memory," Applied Physics Letters, vol.105, pp123506-1-123506-4, 10 Sep. 2014 Keisuke Kado, Mutsunori Uenuma, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Yasuaki Ishikawa, Yukiharu Uraoka "Biological Construction of Single-Walled Carbon Nanotube Electron Transfer Pathways in Dye-Sensitized Solar Cells," ChemSusChem, vol.7, pp2805-2810, 8 Aug. 2014 Ippei Inoue, Kiyoshi Watanabe, Hirofumi Yamauchi, Yasuaki Ishikawa, Hisashi Yasueda, Yukiharu Uraoka, Ichiro Yamashita "Vapor-Induced Improvement in Field Effect Mobility of Transparent a-IGZO TFTs," ECS Journal of Solid State Science and Technology, vol.3-9, ppQ3050-Q3053, 6 Aug. 2014 Mami Fujii, Yasuaki Ishikawa, Masahiro Horita, Yukiharu Uraoka "Analysis of Thermal Degradation in Oxide Thin Film Transistors," ECS Transactions, vol.64, pp71-78, Aug. 2014 Yukiharu Uraoka, Satoshi Urakawa, Yasuaki Ishikawa "Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress," ECS Journal of Solid State Science and Technology, vol.3-9, ppQ3001-Q3004, 9 Apr. 2014 Yoshihiro Ueoka, Yasuaki Ishikawa, Bermundo Juan Paolo Soria, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Masahiro Horita, Yukiharu Uraoka "Analysis of Printed Silver Electrode on Amorphous Indium Gallium Zinc Oxide," Japanese Journal of Applied Physics, vol.53-4, pp04EB03-1-04EB03-5, 17 Mar. 2014 Yoshihiro Ueoka, Takahiro Nishibayashi, Yasuaki Ishikawa, Haruka Yamazaki, Yukihiro Osada, Haruka Yamazaki, Masahiro Horita, Yukiharu Uraoka "Effect of Contact Material on Amorphous InGaZnO Thin-Film Transistor Characteristics," Japanese Journal of Applied Physics, vol.53-3S1, pp03CC04-1-03CC04-5, 27 Feb. 2014 Yoshihiro Ueoka, Yasuaki Ishikawa, Bermundo Juan Paolo Soria, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, Yukiharu Uraoka "Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane," Mater. Res. Soc. Symp. Proc., vol.1633, pp118, 30 Jan. 2014 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Yukiharu Uraoka "The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors," ECS Journal of Solid State Science and Technology, vol.3, ppQ20-Q23, Dec. 2013 H. Yamazaki, Y. Ishikawa, M. Fujii, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Andoh, N. Maejima, H. Matsui, F. Matsui, H. Daimon, Y. Uraoka "Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors," ECS Journal of Solid State Science and Technology, vol.3-2, ppQ16-Q19, 23 Nov. 2013 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, Yukiharu Uraoka "Plasmon Absorbance of SiO2-Wrapped Gold Nanoparticles Selectively Coupled with Ti Substrate Using Porter Protein," Japanese Journal of Applied Physics, vol.52-12, pp125201-1-125201-5, 22 Nov. 2013 Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Naofumi Okamoto, Ichiro Yamashita, Yukiharu Uraoka "Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angleresolved," Journal of Applied Physics, vol.114, pp163713-1-163713-6, 28 Oct. 2013 Y. Ueoka, Y. Ishikawa, N. Maejima, F. Matsui, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, H. Daimon, Y. Uraoka "Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor," physica status solidi (c), vol.10-11, pp1561-1564, 2013.10.18 Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Characterizations of Al2O3 Gate Dielectric Deposited on n-GaN by Plasma-Assisted Atomic Layer Deposition," physica status solidi (c), vol.10-11, pp1426-1429, 30 Sep. 2013 Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Memristive nanoparticles formed using a biotemplate," RSC Advances, vol.3, pp18044-18048, 28 Aug. 2013 Mutsunori Uenuma, Takahiko Ban, Naofumi Okamoto, Bin Zheng, Yasuhiro Kakihara, Masahiro Horita, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Size Control in ZnO Nano-pillar Fabrication using a Gel-Nanoimprint Process," Applied Mechanics and Materials, vol.372, pp149-152, 15 Aug. 2013 Yasuaki Ishikawa, Shinji Araki, Min Zhang, Yukiharu Uraoka "Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene," Applied Physics Letters, vol.103, pp063107-1-063107-5, 9 Aug. 2013 Yana Mulyana, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Shinji Koh "Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin," Journal of Crystal Growth, vol.382, pp31-35, 6 Aug. 2013 Mutsunori Uenuma, Bin Zheng, Kosuke Bundo, Masahiro Horita, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka "Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization," Thin Solid Films, vol.540, pp266-270, 17 Jun. 2013 Yosuke Tojo, Atsushi Miura, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing," Applied Physics Letters, vol.102, pp122107-1-122107-4, 26 Mar. 2013 Mami Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R.T. Mofrad, Masahiro Horita, Yukiharu Uraoka "Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices," Japanese Journal of Applied Physics, vol.52, pp03BA02-1-03BA02-5, 21 Mar. 2013 Shinji Araki, Yasuaki Ishikawa, Min Zhang, Takahiro Doe, Li Lu, Masahiro Horita, Takashi Nishida, Yukiharu Uraoka "Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing," Applied physics letters, vol.102, pp122107, Mar. 2013 Mami Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, uraoka, Johan van der Cingel, Mohammad R. T. Mofrad, Masahiro Horita, Yukiharu Uraoka [ doi:10.1063/1.4798519 ] "Electrical Detection of Surface Plasmon Resonance Phenomena by a Photoelectronic Device Integrated with Gold Nanoparticle Plasmon Antenna," Applied Physics Letters, vol.102, no.8, pp083702-1-083702-4, 27 Feb. 2013 Tatsuya Hashimoto, Yurie Fukunishi, Bin Zheng, Yukiharu Uraoka, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe "Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect," Applied Physics Letters, vol.102, pp053506-1-053506-4, 6 Feb. 2013 Satoshi Urakawa, Shigekazu Tomai, YOshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature," Journal of Display Technology, vol.9, pp741-746, 28 Jan. 2013 Emi Machida, Masahiro Horita, Koji Yamasaki, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue "Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing," Applied Physics Letters, vol.101, pp252106-1-252106-4, 19 Dec. 2012 Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue "Comparison between ZnO Films Grown by Plasma-Assisted Atomic Layer Deposition Using H2O Plasma and O2 Plasma as Oxidant," Journal of Vacuum Science Technology A, vol.31, no.1, pp01A142-1-01A142-5, 13 Dec. 2012 Yumi Kawamura, Nozomu Hattori, Naomasa Miyatake, Yukiharu Uraoka "Improving Crystallinity of Thin Si Film for Low-Energy-Loss Micro-/Nano-Electromechanical Systems Devices by Metal-Induced Lateral Crystallization Using Biomineralized Ni Nanoparticles," Japanese Journal of Applied Physics, vol.51, no.11, pp11PA03-1-11PA03-5, 20 Nov. 2012 Shinya Kumagai, Hiromu Murase, Syusuke Miyachi, Nobuaki Kojima, Yoshio Oshita, Masafumi Yamaguchi, Ichiro Yamashita, Yukiharu Uraoka, Minoru Sasaki "Effects of Si and Ti impurities on electrical properties of sol–gel-derived amorphous SrTa2O6 thin films by UV/O3 treatment," Applied Physics A, vol.112, pp425-430, 16 Nov. 2012 Li Lu, Takashi Nishida, Masahiro Echizen, Yasuaki Ishikawa, Kiyoshi Uchiyama, Yukiharu Uraoka "Chiral meta-molecules consisting of gold nanoparticles and genetically engineered tobacco mosaic virus," Optics Express, vol.20, no.22, pp24856-24863, 16 Oct. 2012 Mime Kobayashi, Satoshi Tomita, Kei Sawada, Kiyotaka Shiba, Hisao Yanagi, Ichiro Yamashita, Yukiharu Uraoka [ doi:10.1364/OE.20.024856 ] "Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition," Journal of Display Technology, vol.9, pp694-698, 1 Oct. 2012 Yumi Kawamura, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa2O6 Thin-Film Capacitors," Japanese Journal of Applied Physics, vol.51, pp09LA18-1-09LA18-4, 20 Sep. 2012 Li Lu, Takashi Nishida, Masahiro Echizen, Yasuaki Ishikawa, Kiyoshi Uchiyama, Tadashi Shiosaki, Yukiharu Uraoka "Construction of Au nanoparticle/ferritin satellite nanostructure," Chemical Physics Letters, vol.547, pp52-57, 19 Aug. 2012 Bin Zheng, Mutsunori Uenuma, Naofumi Okamoto, Ryoichi Honda, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita "Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capacitance–Voltage Method," Material Research Society Proceedings, vol.1436, ppk-5-28, 2 Aug. 2012 Yoshihiro Ueoka, Mami Fujii, Haruka Yamazaki, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV/O3-assisted annealing," AIP Advances, vol.2, pp032111-1-032111-6, 17 Jul. 2012 Li Lu, Masahiro Echizen, Takashi Nishida, Yasuaki Ishikawa, Kiyoshi Uchiyama, Yukiharu Uraoka "Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method," Japanese Journal of Applied Physics, vol.51, pp03CC02-1-03CC02-5, 21 Mar. 2012 Takahiro Doe, Yasuaki Ishikawa, Masahiro Horita, Takashi Nishida, Yukiharu Uraoka "Thin Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing," Japanese Journal of Applied Physics, vol.51, no.3, pp03CA03-1-03CA03-5, 21 Mar. 2012 Koji Yamasaki, Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa2O6," Japanese Journal of Applied Physics, vol.51, pp03CB05-1-03CB05-5, 21 Mar. 2012 Li Lu, Yuta Miura, Masahiro Echizen, Yasuaki Ishikawa, Kiyoshi Uchiyama, Yukiharu Uraoka "Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation," Japanese Journal of Applied Physics, vol.51, pp03CA01-1-03CA01-5, 21 Mar. 2012 Takashi Nishida, Kazushi Fuse, Mamoru Furuta, Yasuaki Ishikawa, Yukiharu Uraoka "Gold Nanoparticle-Induced Formation of Artificial Protein Capsids," Nano Lett., vol.12, no.4, pp2056, Mar. 2012 A. D. Malay, J. G. Heddle, S. Tomita, K. Iwasaki, N. Miyazaki, K. Sumitomo, H. Yanagi, I. Yamashita, Y. Uraoka "Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles," Applied Physics Letters, vol.100, pp083105-1-083105-3, 22 Feb. 2012 Mutsunori Uenuma, Bin Zheng, Kentaro Kawano, Masahiro Horita, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition," Japanese Journal of Applied Physics, vol.51, pp02BF04-1-02BF04-4, 20 Feb. 2012 Yumi Kawamura, Mai Tani, Nozomu Hattori, Naomasa Miyatake, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Capacitance-Voltage and Leakage-Current Characteristics of Sol-Gel-Derived Crystalline and Amorphous SrTa2O6 Thin Films," Thin Solid Films, vol.520, no.9, pp3620, Jan. 2012 呂莉, 西田貴司, 越前正洋, 内山潔, 浦岡行治 "Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin," Applied Surface Science, vol.258, pp3410-3414, 9 Dec. 2011 Mutsunori Uenuma, Bin Zheng, Takanori Imazawa, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka "Control of Selective Adsorption Behavior of Ti-Binding Ferritin on a SiO2 Substrate by Atomic-Scale Modulation of Local Surface Charges," Applied Physics Letters, vol.99, no.26, pp263701, Dec. 2011 橋元達也, 蒲健太郎, 福田めぐみ, 鄭彬, 是津信行, 山下一郎, 浦岡行治, 渡部平司 "A novel bifunctional protein supramolecule for construction of carbon　nanotube–titanium hybrid material," Chemical Communications, vol.47, pp12649-12651, 14 Oct. 2011 Ippei Inoue, Bin Zheng, Kiyoshi Watanabe, Yasuaki Ishikawa, Kiyotaka Shiba, Hisashi Yasueda, Yukiharu Uraoka, Ichiro Yamashita "Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa2O6 Thin Films Fabricated by Sol-Gel Method," Ferroelectrics, vol.421, pp82, Oct. 2011 呂莉, 西田貴司, 越前正洋, 内山潔, 浦岡行治 "Unique Phenomenon in Degradation of Amorphous In2O3–Ga2O3–ZnO Thin-Film Transistors under Dynamic Stress," Applied Physics Express, vol.4, pp104103-1-104103-3, 21 Sep. 2011 Mami Fujii, Yasuaki Ishikawa, Masahiro Horita, Yukiharu Uraoka "Three-Dimensional Nanodot-type Floating Gate Memory Fabricated by Bio-layer-by-layer Method," Appl. Phys. Express, vol.4, pp085004, 1 Aug. 2011 Keisuke Ohara, Bin Zheng, Mutsunori Uenuma, Yasuaki Ishikawa, Kiyotaka Shiba, Ichiro Yamashita, Yukiharu Uraoka "Deposition of proton conductive oxide thin films on a porous substrate for fuel cell applications," Transactions of the Materials Research Society of Japan, vol.36, no.2, pp205, Jul. 2011 Kiyoshi Uchiyama, Yuri Isse, Yuichi Hori, Takashi Nishida, Yukiharu Uraoka "Location and Density Control of Carbon Nanotubes Synthesized Using Ferritin Molecules," Japanese Journal of Applied Physics, vol.50, no.7, pp075102, Jul. 2011 Itsuo Hanasaki, Toshihiro Tanaka, Yositada Isono, Bin Zheng, Yukiharu Uraoka, Ichiro Yamashita "Sterically controlled docking of gold nanoparticles on ferritin surface by DNA hybridization," Nanotechnology, vol.22, no.27, pp275312, Jul. 2011 Bin Zheng, Mutsunori Uenuma, Kenji Iwahori, Naofumi Okamoto, Masanobu Naito, Yasuaki Ishikawa, Yukiharu Uraoka, Ichiro Yamashita "Adsorption Density Control of Ferritin Molecules by Multistep Alternate Coating," Japanese Journal of Applied Physics, vol.50, no.6, pp065201, Jun. 2011 Itsuo Hanasaki, Yoshitada, Isono, Bin Zheng, Yukiharu Uraoka, Ichiro Yamashita "Floating Gate Memory With Biomineralized Nanodots Embedded in HfO(2)," IEEE Transactions on Nanotechnology, vol.10, no.3, pp576, May. 2011 Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka "Resistive random access memory utilizing ferritin protein with Pt nanoparticles," Nanotechnology, vol.22, no.21, pp215201, May. 2011 Mutsunori Uenuma, Kentaro Kawano, Bin Zheng, Naofumi Okamoto, Masahiro Horita, Shigeo Yoshii, Ichiro Yamashita, Yukiharu Uraoka "Gold nanostructures using tobacco mosaic viruses for optical metamaterials," Proceedings of SPIE, vol.8070, no.1, pp80700C, May. 2011 Mime Kobayashi, Ichirou Yamashita, Yukiharu Uraoka, Kiyotaka Shiba, Satoshi Tomita "ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition," Japanese Journal of Applied Physics, vol.50, no.4, pp04DF05, Apr. 2011 Yumi Kawamura, Nozomu Hattori, Naomasa Miyatake, Masahiro Horita, Yukiharu Uraoka "Positional Control of Crystal Grains in Silicon Thin Film Utilizing Cage-Shaped Protein," Japanese Journal of Applied Physics, vol.50, no.4, pp04DL12, Apr. 2011 Yosuke Tojo, Atsushi Miura, Ichiro Yamashita, Yukiharu Uraoka "Thickness dependence of electrical properties for high-k SrTa2O6 thin films fabricated by Sol-Gel method," Japanese Journal of Applied Physics, vol.50, no.3, pp03CA05, Mar. 2011 Li Lu, Takashi Nishida, Masahiro Echizen, Kiyoshi Uchiyama, Yukiharu Uraoka "Static and dynamic observation of supermolecular protein, ferritin, using high-speed atomic force microscope," Journal of Applied Physics, vol.109, no.3, pp034901, Feb. 2011 Shin-ichi Yamamoto, T. Okada, Yukiharu Uraoka, Ichiro Yamashita, S. Hasegawa "Resistive Memory Utilizing Ferritin Protein with Nano Particle," Key Engineering Materials, vol.470, pp92, Feb. 2011 Mutsunori Uenuma, Kentaro Kawano, Bin Zheng, Masahiro Horita, Shigeo Yoshii, Ichiro Yamashita, Yukiharu Uraoka "A water-soluble carbon nanotube network conjugated by nanoparticles with defined nanometre gaps," Chemical Communications, vol.47, no.12, pp3475, Jan. 2011 Mime Kobayashi, Shinya Kumagai, Bin Zheng, Yukiharu Uraoka, Trevor Douglas, Ichiro Yamashita "Fabrication of atomically flat Pt layer on sapphire substrate by low angle incidence sputtering method," Transactions of the Materials Research Society of Japan, vol.36, no.1, pp11, Jan. 2011 Takashi Nishida, Kenshiro Asahi, Yasuhiro Yoneda, Kazuhisa Tamura, Daiju Matsumura, Hideo Kimura, Yasuaki Ishikawa, Yukiharu Uraoka "Construction of a ferritin dimer by breaking its symmetry," Nanotechnology, vol.21, no.44, pp445602, Nov. 2010 Bin Zheng, Mutsunori Uenuma, Yukiharu Uraoka, Ichiro Yamashita "Electrical properties of Ba0.5Sr0.5Ta2O6 thin film fabricated by Sol-Gel method," IEICE Transactions on Electronics, vol.E93-C, no.10, pp1511, Oct. 2010 Li Lu, Masahiro Echizen, Takashi Nishida, Kiyoshi Uchiyama, Yukiharu Uraoka "Annealing and composition effects of (BaxSr1-x)Ta2O6 thin films fabricated by sol-gel method," Japanese Journal of Applied Physics, vol.49, pp09MA14, Sep. 2010 Li Lu, Takashi Nishida, Masahiro Echizen, Kiyoshi Uchiyama, Yukiharu Uraoka "Crystallization by Green-laser Annealing for Three-dimensional Device Application," Journal of the Korean Physical Society, Vol. 56, No. 5, pp. 1456_1460., 1 May. 2010 Kawamura, Y, Yamasaki, K, Yamashita, T, Sugawara, Y, Uraoka, Y, Kimura, M [ doi:10.3938/jkps.56.1456 ] "Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition," Jpn. J. Appl. Phys. vol. 49 no. 49 (2010) 04DF19, 1 Apr. 2010 Kawamura, Y, Horita, M, Uraoka, Y [ doi:10.1143/JJAP.49.04DF19 ] "Annealing and Composition Effects of (BaxSr1-x)Ta2O6 Thin Films Fabricated by Sol-Gel Method," Japanese Journal of Applied Physics, vol.49, no.09MA14, pp09MA14, 1 Apr. 2010 Lu, L, Nishida, T, Echizen, M, Uchiyama, K, Uraoka, Y [ doi:10.1143/JJAP.49.09MA14 ] "Transaction of the Material Research Society of Japan," Material Research Society of Japan, 35[1] 177-180 (2010)., 1 Apr. 2010 Li Lu, Masahiro Echizen, Takashi Nishida, Kiyoshi Uchiyama, Y.Uraoka "Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator," Jpn. J. Appl. Phys., Vol. 49 (2010) 04DJ05, 1 Apr. 2010 Ohara, K, Yamashita, I, Uraoka, Y [ doi:10.1143/JJAP.49.04DJ05 ] "Investigation of Oxide Films Prepared by Direct Oxidation of C-face 4H-SiC in Nitric Oxide," Mater. Sci. Forum, vol.645-648, pp515, 1 Apr. 2010 Okamoto, D, Yano, H, Oshiro, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.645-648.515 ] "NH3 Plasma Pretreatment of 4H-SiC(000(1)over-bar) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices," Appl. Phys. Exp., vol.3, no.2, pp02620, 1 Apr. 2010 Iwasaki, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/APEX.3.026201 ] "Significant decrease of the interface state density by NH3 plasma pretreatment at 4H-SiC (000(1)over-bar) surface and its bond configuration," Mater. Sci. Forum, vol.645-648, pp503, 1 Apr. 2010 Iwasaki, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.645-648.503 ] "ZnO Thin Film Transistors fabricated by atomic layer deposition," Proceedings of the Fall Meeting of Material Research Society, Vol. 1201, 1201-H10-27, 1 Apr. 2010 Y. Kawamura, Y. Uraoka "Site-directed delivery of ferritin-encapsulated gold nanoparticles," Nanotechnoligy, Volume 21, No.4, 045305, 1 Apr. 2010 Zheng, B, Yamashita, I, Uenuma, M, Iwahori, K, Kobayashi, M, Uraoka, Y [ doi:10.1088/0957-4484/21/4/045305 ] "Fabrication and evalution of SrTa_2O_6 thin films using Sol-Gel method," Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, pp109, 1 Apr. 2010 Li Lu, Masahiro Echizen, Takashi Nishida, Kiyoshi Uchiyama, Yukiharu Uraoka "Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin," Jounal of the Korean Physical Society,Vol.56, No.3, pp842-845, 1 Mar. 2010 Yamasaki, K, Ochi, M, Sugawara, Y, Yamashita, I, Uraoka, Y [ doi:10.3938/jkps.56.842 ] "NH3 Plasma Pretreatment of 4H-SiC(000(1)over-bar) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices," Appl. Phys. Exp., vol.3, no.2, pp026201/1, 1 Feb. 2010 Iwasaki, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/APEX.3.026201 ] "Local Electrical Properties of Poly-Si Thin Films," AM-FPD ’09, pp247, 1 Jul. 2009 Hiroshi Ikenoue, Emi Machida 1, Yukiharu Uraoka, Takeshi Ito, Ryohei Kokawa "Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen," Jpn. J. Appl. Phys., vol.48, no.6, pp066516/1, 1 Jun. 2009 Hatayama, T, Shimizu, T, Kouketsu, H, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.48.066516 ] "Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors," Japanese Journal of Applied Physics, vol.48, pp04C091-1-04C091-6, 20 Apr. 2009 Mami Fujii, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Jang Yeon Kwon "Experimental and Theoretical Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors," Jpn. J. Appl. Phys. 48 (2009) 04C091-1～6., 1 Apr. 2009 Mami Fujii, Uraoka, Y, Fuyuki, T, Jung, JS, Kwon, JY [ doi:10.1143/JJAP.48.04C091 ] "Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices," Jap. J.Appl. Phys. 48(2009) 04C187-1～6., 1 Apr. 2009 Huang, CH, Igarashi, M, Wone, M, Uraoka, Y, Fuyuki, T, Takeguchi, M, Yamashita, I, Samukawa, S [ doi:10.1143/JJAP.48.04C187 ] "High-Pressure Water Vapor Heat Treatment for Enhancement of SiOx or SiNx Passivation Layers of Silicon Solar Cells," Jpn. J. Appl. Phys., 48, 066504 (2009), 1 Apr. 2009 Ogane, A, Kitiyanan, A, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.48.066504 ] "Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen," Mater. Sci. Forum, vol.600-603, pp659, 1 Apr. 2009 Hatayama, T, Shimizu, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.4028/0-87849-357-3.659 ] "Comprehensive study of electroluminescence in multicrystalline silicon solar cells," J.Appl. Phys., 106, 043717, (2009), 1 Apr. 2009 Kitiyanan, A, Ogane, A, Tani, A, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1063/1.3204942 ] "Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors," Jpn J. Appl. Phys, Vol.48, No.3, P.03B009, 1 Apr. 2009 Sato, T, Ueno, A, Yara, T, Miyamoto, E, Uraoka, Y, Kubota, T, Samukawa, S [ doi:10.1143/JJAP.48.03B009 ] "Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate," J. Crystal Growth, 311, Issue 3 pp.789-793, (2009), pp789, 1 Apr. 2009 Ogane, A, Honda, S, Uraoka, Y, Fuyuki, T, Fejfar, A, Kocka, J [ doi:10.1016/j.jcrysgro.2008.09.098 ] "The characterization of a single discrete bionanodot for memory device applications," Nanotechnology 20(2009) 125702-1～9, 1 Apr. 2009 Miura, A, Tanaka, R, Uraoka, Y, Matsukawa, N, Yamashita, I, Fuyuki, T [ doi:10.1088/0957-4484/20/12/125702 ] "Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs," Mater. Sci. Forum, vol.600-603, pp747, 1 Apr. 2009 Okamoto, D, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.4028/0-87849-357-3.747 ] "Controlled Reduction of Bionanodots for Better Charge Storage Characteristics of Bionanodots Flash Memory," Jpn. J. Appl. Phys., Vol. 48, No. 4, pp.04C190_1-04C190_5, 1 Apr. 2009 Tojo, Y, Miura, A, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1143/JJAP.48.04C190 ] "The characterization of a single discrete bionanodot for memory device applications," Nanotechnology, Vol.20, No.12, pp.125702_1-125702_9, 25 Mar. 2009 Miura, A, Tanaka, R, Uraoka, Y, Matsukawa, N, Yamashita, I, Fuyuki, T [ doi:10.1088/0957-4484/20/12/125702 ] "Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures," Appl. Phys. Exp., vol.2, no.2, pp021201/1, 1 Feb. 2009 Okamoto, D, Yano, H, Oshiro, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/APEX.2.021201 ] "Nonvolatile Thin Film Transistor Memory with Ferritin," J. Korean Phys. Soc., vol.54, no.1, pp554, 1 Jan. 2009 Ichikawa, K, Mami Fujii, Uraoka, Y, Punchaipetch, P, Yano, H, Hatayama, T, Fuyuki, T, Yamashita, I [ doi:10.3938/jkps.54.554 ] "Anisotoropic etching of SiC in the mixed gas of chlorine and oxygen," Mat. Sci. Forum, vol.600-603, pp659, 1 Sep. 2008 T.Hatayama, T.Shimizu, H.Yano, Y.Uraoka, T.Fuyuki "Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors," Japanese Journal of Applied Physics, vol.47, pp6236-6240, 8 Aug. 2008 Mami Fujii, Hiroshi YANO, Tomoaki HATAYAMA, Yukiharu Uraoka, Takashi FUYUKI, Ji Sim JUNG, Jang Yeon KWON "Analysis of anomalous charge-pumping characteristics on 4H-SiC MOSFETs," IEEE Tran.Electron Devices, vol.55, no.8, pp2013, 1 Aug. 2008 Okamoto, D, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1109/TED.2008.926639 ] "Rear side passivated monocrystalline silicon thin film solar cells with laser fired contact process," Appl. Phys. Exp., 1, No. 8, 085002, (2008), 1 Apr. 2008 Takahashi, Y, Hirata, K, Ogane, A, Uraoka, Y, Fuyuki, T [ doi:10.1143/APEX.1.085002 ] "Surface Potential Evaluations of Ferritin Nanodots by Kelvin Force Microscopy," Journal of Scann Pobe Microsc. vol. 3, 1-6, 1 Apr. 2008 S.Yamamoto, K. Kobayashi, H. Yamada, H. Yoshioka, Y.Uraoka, T.Fuyuki, M. Okuda, I.Yamashita "Thermal Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors," Jpn. J. Appl. Phys., Vol. 47, No.8, pp.6236-6240,2008, vol.47, no.8, pp6236, 1 Apr. 2008 Mami Fujii, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Jung, JS, Kwon, JY [ doi:10.1143/JJAP.47.6236 ] "Surface Investigations of Self-Organized Co-Ferritin Nano-Dots by Atomic Force Microscopy," Journal of Physics, 1 Apr. 2008 S-I. Yamamoto, H. Yoshioka, Y.Uraoka, T.Fuyuki, I.Yamashita "NH3 plasma interface modification for silicon surface passivation at very low temperature," Jpn. J. Appl. Phys., Vol 47, No. 7, pp. 5320-5323, 1 Apr. 2008 Takahashi, Y, Nigo, J, Ogane, A, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.47.5320 ] "Fabrication of poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate," Appl. Phys. Lett. 93, 241503, 2008, 1 Apr. 2008 Nakamura, T, Kuraseko, H, Hanazawa, K, Koaizawa, H, Uraoka, Y, Fuyuki, T, Mimura, A [ doi:10.1063/1.3013839 ] "Compositional changes in Co-ferritin nanoparticles induced by ion bombardment as determined by Kelvin probe force microscopy in high vacuum," Jpn. J. Appl. Phys., Vol. 47, No.8, pp.6160-6163, 2008, vol.47, no.8, pp6160, 1 Apr. 2008 Yamamoto, S, Yoshioka, H, Uraoka, Y, Fuyuki, T, Okuda, M, Yamashita, I [ doi:10.1143/JJAP.47.6160 ] "Electrical Characterisitics of ferritin cores Investegated by Kelvin Probe Force Microscopy," Journal of Physics 100,(2008) 52004-52007, 1 Apr. 2008 Yamamoto, S, Kobayashi, K, Yamada, H, Yoshioka, H, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1088/1742-6596/100/5/052004 ] "Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node," Journal of Applied Physics, Vol.103, No.7, 074503-1~10, (2008), vol.103, no.7, 1 Apr. 2008 Miura, A, Uraoka, Y, Fuyuki, T, Yoshii, S, Yamashita, I [ doi:10.1063/1.2888357 ] "Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template," Nanotechnology 19 (208) 255201, 2008, 1 Apr. 2008 Miura, A, Tsukamoto, R, Yoshii, S, Yamashita, I, Uraoka, Y, Fuyuki, T [ doi:10.1088/0957-4484/19/25/255201 ] "4H-SiC nMOSFETおよびpMOSFETに対するチャージポンピング測定," 信学技報, vol.SDM2007-234, pp51, 2007.12.14 岡本大, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆 "Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates," Material Science Forum, Vols.556-557, pp.807-810, 2007., 1 Oct. 2007 Yano, H, Nakao, H, Hatayama, T, Uraoka, Y, Fuyuki, T "Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors," Jpn. J. Appl. Phys., Vol, 46, No.3B, 2007, pp.1303-1307., 1 Oct. 2007 Ueno, H, Sugawara, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Jung, JS, Park, KB, Kim, JM, Kwon, JY, Noguchi, T [ doi:10.1143/JJAP.46.1303 ] "Modification of SiO2/4H-SiC interface properties by high-pressure H2O vapor annealing," Material Science Forum, Vols.556-557, pp.663-666, 2007., 1 Oct. 2007 Takeda, D, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T "Bionanodot monolayer array fabrication for nonvolatile memory application," Surface Science Letters, 601, L.81-L85, 2007, 1 Oct. 2007 Miura, A, Uraoka, Y, Fuyuki, T, Kumagai, S, Yoshii, S, Matsukawa, N, Yamashita, I [ doi:10.1016/j.susc.2007.05.044 ] "Crystallization of double-layered silicon thin films by solid green laser annealing for high-performance thin-film transistors," IEEE EDL. Vol.28, No.5, 395-397, 2007., 1 Oct. 2007 Sugawara, Y, Uraoka, Y, Yano, H, Hatayarna, T, Fuyuki, T, Mimura, A [ doi:10.1109/LED.2007.895397 ] "Coulomb-staircase observed in silicon-nanodisk structures fabricated by low-energy chlorine neutral beams," Journal of Appl Phys. 101、124301,　2007, 1 Oct. 2007 Kubota, T, Hashimoto, T, Takeguchi, M, Nishioka, K, Uraoka, Y, Fuyuki, T, Yamashita, I, Samukawa, S [ doi:10.1063/1.2747226 ] "Crystallization of double-layered silicon thin films by solid green laser annealing," Jpn. J. Appl. Phys., 46, No.8, pp.L164-L166,2007, 1 Oct. 2007 Sugawara, Y, Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T, Mimura, A [ doi:10.1143/JJAP.46.L164 ] "Properties of thermally etched 4H-SiC by chlorine-oxygen system," Material Science Forum, Vols.556-557, pp.283-286, 2007., 1 Oct. 2007 Hatayama, T, Takenami, S, Yano, H, Uraoka, Y, Fuyuki, T "Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8 degrees off substrates," Appl. Phys. Lett., Vol.90, pp.042102-1/3, 2007., 1 Oct. 2007 Yano, H, Nakao, H, Mikami, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1063/1.2434157 ] "Surface potential difference of biomineralized inorganic nanodot by Kelvin probe force microscopy," Jpn. J. Appl. Phys., Vol. 46, No.8B, pp.5647-5651, 1 Oct. 2007 Yamamoto, SI, Yoshioka, H, Uraoka, Y, Fuyuki, T, Okuda, M, Yamashita, I [ doi:10.1143/JJAP.46.5647 ] "Effects of dot density and dot size on charge injection characteristics in nanodot array produced by protein supramolecules," Jpn J. Appl. Phys, (in press), 1 Oct. 2007 Yamada, K, Yoshii, S, Kumagai, S, Miura, A, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1143/JJAP.46.7549 ] "Crystallinity evaluation by microwave photoconductivity decay in double-layered polycrystalline silicon thin films crystallized by solid green laser annealing," Jpn. J. Appl. Phys., vol.46, no.12, pp7607, 1 Oct. 2007 Sugawara, Y, Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T, Mimura, A [ doi:10.1143/JJAP.46.7607 ] "Reliability of low temperature polycrystalline silicon thin-film transistors with ultrathin gate oxide," Jpn. J. Appl. Phys. Vol.46, No.7A, pp.4021-4027, 2007., 1 Oct. 2007 Ueno, H, Sugawara, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Serikawa, T [ doi:10.1143/JJAP.46.4021 ] "Low temperature polycrystalline silicon thin film transistors flash memory with silicon nanocrystal dot," Jpn. J. Appl. Phys. Vol.46, No.27, 2007, pp.L661-L663., 1 Oct. 2007 Ichikawa, K, Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T, Takahashi, E, Hayashi, T, Ogata, K [ doi:10.1143/JJAP.46.L661 ] "Thermal degradation under pulse operation in low-temperature p-channel poly-Si thin-film transistors," IEEE/T-ED　Vol.54, No.2, p.297-300, 2007, 1 Oct. 2007 Hashimoto, S, Kitajima, K, Uraoka, Y, Fuyuki, T, Morita, Y [ doi:10.1109/TED.2006.888724 ] "Low-damage fabrication of high aspect nanocolumns by using neutral beams and ferritin-iron-core mask," J. Vac. Sci Technok. B 25(3), 2007, pp.760-766., 1 Oct. 2007 Kubota, T, Baba, T, Saito, S, Yamasaki, S, Kumagai, S, Matsui, T, Uraoka, Y, Fuyuki, T, Yamashita, I, Samukawa, S [ doi:10.1116/1.2732734 ] "Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin," Jpn. J. Appl. Phys. Vol.46 (2007) No.34 pp.L804 - L806, 1 Oct. 2007 Ichikawa, K, Uraoka, Y, Punchaipetch, P, Yano, H, Hatayama, T, Fuyuki, T, Yamashita, I [ doi:10.1143/JJAP.46.L804 ] "Sloped sidewalls in 4H-SiC mesa structure formed by a Cl-2-O-2 thermal etching," Material Science Forum, Vols.556-557, pp.733-736, 2007., 1 Oct. 2007 Takenami, S, Hatayamaa, T, Yano, H, Uraoka, Y, Fuyuki, T "Evaluation by μ-PCD in Double-Layered Poly-Si Thin FilmsCrystallized by Solid Green Laser Annealing," Jpn. J. Appl. Phys.. (in press), 2007.10.1 Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Akio Mimura "Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems," Solar Energy Materials and Solar Cells, Volume 90, Issue 9, 23 May 2006, Pages 1308-1321., 1 Oct. 2007 Nishioka, K, Takamoto, T, Agui, T, Kaneiwa, M, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.solmat.2005.08.003 ] "Suppression of self-heating in low-temperature polycrystalline silicon thin-film transitors," Jpn. J. Appl., Phys. Vol.46, 4A, 2007, pp.1387-1391, 1 Oct. 2007 Hashimoto, S, Uraoka, Y, Fuyuki, T, Morita, Y [ doi:10.1143/JJAP.46.1387 ] "Crystallization of double-layered silicon thin films by solid green laser annealing for high-performance thin-film transistors," IEEE Electron Device Lett., vol.28, no.5, pp395, 1 May. 2007 Sugawara, Y, Uraoka, Y, Yano, H, Hatayarna, T, Fuyuki, T, Mimura, A [ doi:10.1109/LED.2007.895397 ] "Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence," Appl. Phys. Lett., 86, 262108, (2005), 1 Apr. 2007 Fuyuki, T, Kondo, H, Yamazaki, T, Takahashi, Y, Uraoka, Y [ doi:10.1063/1.1978979 ] "Polycrystalline silicon thin-film transistors on quartz fiber," Appl. Phys. Lett., vol.91, no.20, pp203518, 1 Apr. 2007 Sugawara, Y, Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T, Nakamura, T, Toda, S, Koaizawa, H, Mimura, A, Suzuki, K [ doi:10.1063/1.2815925 ] "Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors," Jpn. J. Appl. Phys, vol.46, no.3B, pp1303, 1 Mar. 2007 Ueno, H, Sugawara, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Jung, JS, Park, KB, Kim, JM, Kwon, JY, Noguchi, T [ doi:10.1143/JJAP.46.1303 ] "高圧水蒸気熱処理したSiO2/4H-SiC界面特性の改善," 信学技報, vol.SDM2006-208, pp37, 2006.12.14 武田大輔, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆 "Characterization of 4H-SiC MOSFETs with NO-annealed CVD oxide," Material Science Forum, Vols.527-529, pp.971-974, 2006., 1 Oct. 2006 Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T "Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories," J.Vac. Sci. Technol. B24(3), may/Jun 2006,1271-1277., 1 Oct. 2006 Punchaipetch, P, Ichikawa, K, Uraoka, Y, Fuyuki, T, Tomyo, A, Takahashi, E, Hayashi, T [ doi:10.1116/1.2198852 ] "Enhancing memory efficiency of Si nanocrystal floating gate memories with high-kappa gate oxides," Appl. Phys. Lett., 89,1(2006), 1 Oct. 2006 Punchaipetch, P, Uraoka, Y, Fuyuki, T, Tomyo, A, Takahashi, E, Hayashi, T, Sano, A, Horii, S [ doi:10.1063/1.2339562 ] "Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth," Microelectronic Eng., Vol.83, No.1, pp.30-33, 2006., 1 Oct. 2006 Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.mee.2005.10.019 ] "Evaluation of crystallinity in 4H-SiC{0001} epilayers thermally etched by chlorine and oxygen system," Jpn. J. Appl. Phys. Vol.45, No.27, 2006, L690-L693., 1 Oct. 2006 Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.45.L690 ] "Dependence of solar cell performance on electronic properties at grain boundaries in polycrystalline silicon thin films deposited by atmospheric pressure chemical vapor deposition," Jpn J. Appl. Phys.Vol.45. No.8A, 6342-6345, 2006., 1 Oct. 2006 Yamazaki, T, Matsumura, Y, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.45.6342 ] "Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems," Solar Energy Materials & Solar Cells, 90(2006) 1308-1321., 1 Oct. 2006 Nishioka, K, Takamoto, T, Agui, T, Kaneiwa, M, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.solmat.2005.08.003 ] "New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot," J. Korean Phys. Soc.Vol.49, No.2, pp.569-576,2006, 1 Oct. 2006 Ichikawa, K, Punchaipetch, P, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Tomyo, A, Takahashi, E, Hayashi, T, Ogata, K "Improving high-kappa gate dielectric properties by high-pressure water vapor annealing," Jpn. J. Appl. Phys, Vol.45, No.4, 2006, L120-L123., 1 Oct. 2006 Punchaipetch, P, Miyashita, M, Uraoka, Y, Fuyuki, T, Sameshima, T, Horii, S [ doi:10.1143/JJAP.45.L120 ] "Improvement of reliability in low-temperature polycrystalline silicon thin-film transistors by water vapor annealing," Jpn J. Appl. Phys.Vol.45, No.7, 2006, pp.5657-5661., 1 Oct. 2006 Uraoka, Y, Miyashita, M, Sugawara, Y, Yano, H, Hatayama, T, Fuyuki, T, Sameshima, T [ doi:10.1143/JJAP.45.5657 ] "Reduction of core in cage protein for application to electron device," Surface Science, 600,(2006) 2817-2822., 1 Oct. 2006 Hikono, T, Uraoka, Y, Fuyuki, T, Yoshii, S, Yamashita, I, Takeguchi, M [ doi:10.1016/j.susc.2006.05.010 ] "High purity SiC epitaxial growth by chemical vapor deposition using CH3SiH3 and C3H8 sources," Materials Science Forum, Vols.527-529, pp.203-206, 2006., 1 Oct. 2006 Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T "Evaluation technique for reliability in low-temperature poly-Si thin film transistors," J. Korean Phys. Soc. Vol.48, ppS55-S66, 2006., 1 Oct. 2006 Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T "Hot carrier effect in low-temperature poly-Si TFTs with sputtered gate SiO2 films," J. Korean Phys. Soc.Vol.49, No.4, pp.1477-1481, 2006., 1 Oct. 2006 Uraoka, Y, Miyashita, M, Sugawara, Y, Yano, H, Hatayama, T, Fuyuki, T, Serikawa, T "3-Dimensional non-destructive dislocation analyses in SiC measured by planar electron-beam-induced current method," Materials Science Forum, Vols.527-529, pp.423-426, 2006., 1 Oct. 2006 Yanagisawa, Y, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T "Floating gate metal-oxide-semiconductor capacitor employing array of high-density nanodots produced by protein supramolecule," Jpn J. Appl. Phys, Vol.45, No.11, 2006, pp.8946-8951., 1 Oct. 2006 Yamada, K, Yoshii, S, Kumagai, S, Miura, A, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1143/JJAP.45.8946 ] "Characterization of 4H-SiC MOSFETs formed on the different trench sidewalls," Material Science Forum, Vols.527-529, pp.1293-1296, 2006., 1 Oct. 2006 Nakao, H, Mikami, H, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T "Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process," Appl Phys. Let. No.89, 233127 (2006)., 1 Oct. 2006 Kubota, T, Hashimoto, T, Ishikawa, Y, Samukawa, S, Miura, A, Uraoka, Y, Fuyuki, T, Takeguchi, M, Nishioka, K, Yamashita, I [ doi:10.1063/1.2404608 ] "Ray-trace simulation of light trapping in silicon solar cell with texture structures," Solar Energy Materials & Solar Cells Solar Energy Materials & Solar Cells 90, (2006) 2647-2656., 1 Oct. 2006 Yagi, T, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.solmat.2006.02.031 ] "Sputter-deposited thin gate SiO2 films for high quality polycrystalline silicon thin film transistors," Jpn. J. Appl. Phys. Vol.45, No.5B, 2006, pp.4358-4361., 1 Oct. 2006 Serikawa, T, Miyashita, M, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.45.43581 ] "Floating nanodot gate memory devices based on biomineralized inorganic nanodot array as a storage node," Jpn. J. Appl. Phys. Vol.45 (2006) No.01 pp.L1 - L3., 1 Oct. 2006 Miura, A, Hikono, T, Matsumura, T, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Yoshii, S, Yamashita, I [ doi:10.1143/JJAP.45.L1 ] "Effect of SiO2 tunnel oxide thickness on electron tunneling mechanism in Si nanocrystal dots floating-gate memories," J.　Jpn. J. Appl. Phys. Vol.45 No.5A p.3997.(2006), 1 Oct. 2006 Punchaipetch, P, Ichikawa, K, Uraoka, Y, Fuyuki, T, Takahashi, E, Hayashi, T, Ogata, K [ doi:10.1143/JJAP.45.3997 ] "Analysis of p-n junction profiles of polycrystalline silicon thin-film solar cells by electron-beam-induced current technique," Jpn. J. Appl. Phys., Vol. 45, No.4A, 2441-2446 (2006)., 1 Oct. 2006 Yamazaki, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.45.2441 ] "Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein," Appl. Phys. Lett, 88, 023108, 2006.67., 1 Oct. 2006 Hikono, T, Matsumura, T, Miura, A, Uraoka, Y, Fuyuki, T, Takeguchi, M, Yoshii, S, Yamashita, I [ doi:10.1063/1.2162686 ] "Analysis of thermal distribution in low-temperature polycrystalline silicon p-channel thin film transistors," Jpn. J. Appl. Phys. Vol.45, No.1A, 2006, pp.7-12., 1 Oct. 2006 Hashimoto, S, Uraoka, Y, Fuyuki, T, Morita, Y [ doi:10.1143/JJAP.45.7 ] "Annual output estimation of concentrator photovoltaic systems using high-efficiency InGaP/InGaAs/Ge triple-junction solar cells based on experimental solar cell's characteristics and field-test meteorological data," Solar Energy Materials & Solar Cells, 90 (2006) 56-67., 1 Oct. 2006 Nishioka, K, Takamoto, T, Agui, T, Kaneiwa, M, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.solmat.2005.01.011 ] "New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot," J. Korean Phys. Soc., vol.49, no.2, pp569, 1 Feb. 2006 Ichikawa, K, Punchaipetch, P, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Tomyo, A, Takahashi, E, Hayashi, T, Ogata, K "Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles," Appl. Phys. Lett, 86, 262106(2005), 5 Oct. 2005 Kirimura, H, Uraoka, Y, Fuyuki, T, Okuda, M, Yamashita, I [ doi:10.1063/1.1954872 ] "Analysis of photoelectrochemical processes in alpha-SiC substrates with atomically flat surfaces," Jpn. J. Appl. Phys. Vol.44, No.12,2005, pp.8329-8332., 1 Oct. 2005 Mikami, H, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.44.8329 ] "Fabrication of anodic oxidation films on 4H-SiC at room temperature using HNO3-based electrolytes," Jpn. J. Appl. Phys 44, (2005), pp.3918-3920., 1 Oct. 2005 Mikami, H, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.44.3918 ] "Reduction of fluoride species and surface roughness by H-2 gas addition in SiC dry etching," Mater. Sci. Forum, Vols.483-485, pp.757-760 (2005)., 1 Oct. 2005 Mikami, H, Horie, Y, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T "Role of hydrogen in dry etching of silicon carbide using inductively and capacitively coupled plasma," Jpn. J. Appl. Phys 44, (2005), pp.3817-3821., 1 Oct. 2005 Mikami, H, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.44.3817 ] "Thermal degradation of low temperature poly-Si TFT," Thin Solid Film, 2005, pp.216-220., 1 Oct. 2005 Fuyuki, T, Kitajima, K, Yano, H, Hatayama, T, Uraoka, Y, Hashimoto, S, Morita, Y [ doi:10.1016/j.tsf.2005.01.068 ] "Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration," Solar Energy Materials & Solar Cells, 85(2005) 429-436., 1 Oct. 2005 Nishioka, K, Takamoto, T, Agui, T, Kaneiwa, M, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.solmat.2004.05.008 ] "Electron injection into Si nanodot fabricated by side-wall plasma enhanced chemical vapor deposition," Jpn. J. Appl. Phys 44, 26　(2005), pp.L836-L838., 1 Oct. 2005 Ichikawa, K, Punchaipetch, P, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Takahashi, E, Hayashi, T, Ogata, K [ doi:10.1143/JJAP.44.L836 ] "Degradation in low-temperature poly-si thin film transistors depending on grain boundaries," Jpn. J. Appl. Phys 44, (2005), pp.2895-2901, 1 Oct. 2005 Uraoka, Y, Kitajima, K, Kirimura, H, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.44.2895 ] "Nondestructive analysis of crystal defects in 4H-SiC epilayer by devised electron-beam-induced current method," Jpn. J. Appl. Phys 41, (2005), pp.L1271-1274, 1 Oct. 2005 Nitani, S, Hatayama, T, Yamaguchi, K, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.44.L1271 ] "Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply," Thin Solid Film, 487, (2005) 26-30, 1 Oct. 2005 Yamazaki, T, Uraoka, Y, Fuyuki, T [ doi:10.1016/j.tsf.2005.01.029 ] "High temperature NO annealing of deposited SiO2 and SiON films on n-type 4H-SiC," Materials Science Forum Vol.483-485(2005)pp.685-688., 1 Oct. 2005 Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T "Hot carrier effect in ultra thin gate oxide metal oxide semiconductor field effect transistor," Jpn. J. Appl. Phys 44, 8　(2005), pp.5889-5892., 1 Oct. 2005 Uraoka, Y, Honda, H, Fuyuki, T, Sasaki, T, Yasuhira, M [ doi:10.1143/JJAP.44.5889 ] "Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence," Appl. Phys. Lett, 86, 262108 (2005), 1 Oct. 2005 Fuyuki, T, Kondo, H, Yamazaki, T, Takahashi, Y, Uraoka, Y [ doi:10.1063/1.1978979 ] "Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks," J. Vac. Sci. Technol. B 23(2), 2005, p.534-539., 1 Oct. 2005 Kubota, T, Baba, T, Kawashima, H, Uraoka, Y, Fuyuki, T, Yamashita, I, Samukawa, S [ doi:10.1116/1.1880232 ] "Influence of H-2 pre-treatment on Ni/4H-SiC Schottky diode properties," Mat. Sci. Forum, Vol.457-460, pp.1049-1052, 2004., 1 Oct. 2004 Yamamoto, Y, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.457-460.1049 ] "Radical nitridation of ultra-thin SiO2/SiC structure," Mat. Sci. Forum, Vol.457- 460, pp.1333-1336, 2004., 1 Oct. 2004 Yano, H, Furumoto, Y, Niwa, T, Hatayama, T, Uraoka, Y, Fuyuki, T "Analysis of electrical properties of grain boundaries in polycrystalline silicon solar cell using laser beam induced current," Jpn. J. Appl. Phys. Vol.43, No. 7A, 2004, pp.4068-4072., 1 Oct. 2004 Yagi, T, Nishioka, K, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.43.4068 ] "A 7-nm nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams," Appl. Phys. Lett., Vol.84, No.9, pp.1555-1557, 2004, 1 Oct. 2004 Kubota, T, Baba, T, Samukawa, S, Kawashima, H, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1063/1.1655701 ] "Mechanisms in electrochemical etching of alpha-SiC substrates," Mat. Sci. Forum, Vol.457-460, pp.813-816, 2004., 1 Oct. 2004 Mikami, H, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T "Fast oxidation of 4H-SiC at room temperature by electrochemical methods," Mat. Sci. Forum, Vol.457-460, pp.1353-1356, 2004., 1 Oct. 2004 Mikami, H, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.457-460.1353 ] "Relationship between surface structures and aluminium incorporation behaviour of SiC in chemical vapor deposition," Mat. Sci. Forum, Vol.457-460, pp.739-742, 2004., 1 Oct. 2004 Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.457-460.739 ] "Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSxOy gate dielectrics," Jpn. J. Appl. Phys.,43, (2004), pp.7815-7820, 1 Oct. 2004 Punchaipetch, P, Okamoto, T, Nakamura, H, Uraoka, Y, Fuyuki, T, Horii, S "Low-temperature microcrystalline silicon film deposited by high-density and low-potential plasma technique using hydrogen radicals," Jpn.J.Appl. Phys., 43, No.12, 2004, pp.7929-7933., 1 Oct. 2004 Kirimura, H, Kubota, K, Takahashi, E, Kishida, S, Ogata, K, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.43.7929 ] "Noble evaluation method for light trapping effect in polycrystalline silicon solar cells with texture structures using laser beam induced current," Jpn. J. Appl. Phys. Vol.43, No.2, pp.439-443, 2004, 1 Oct. 2004 Yagi, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.43.439 ] "Evaluation of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light by Simulation Program with Integrated Circuit Emphasis," Jpn. J. Appl. Phys. Vol.43, No.3, pp.882-889, 2004., 1 Oct. 2004 Nishioka, K, Takamoto, T, Agui, T, Kaneiwa, M, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.43.882 ] "Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope," IEEE Trans. Electron Devices, Vol.51, No.1, pp.28-35, 2004., 1 Oct. 2004 Uraoka, Y, Hirai, N, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1109/TED.2003.820937 ] "Polycrystalline silicon thin film for solar cells utilizing aluminum induced crystallization method," Jpn. J. Appl. Phys., vol.43, no.3, pp877, 1 Apr. 2004 Ishikawa, Y, Nakamura, A, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.43.877 ] "Low temperature nitridation of Si oxide utilizing activated oxygen and nitrogen," Jpn, J. Appl. Phys. Vol.42, pp.1145-1149, 2003., 1 Oct. 2003 Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.42.1145 ] "Surface structure of electrochemically etched alpha-SiC substrates," Materials Science Forum, Vols.433-436, pp.717-720, 2003., 1 Oct. 2003 Mikami, H, Umetani, A, Hatayama, T, Yano, H, Uraoka, Y, Fuyuki, T "Field-test analysis of PV system output characteristics focusing on module temperature," Solar Energy Material &Solar Cells 75, pp.665-671, 2003., 1 Oct. 2003 Nishioka, K, Hatayama, T, Uraoka, Y, Fuyuki, T, Hagihara, R, Watanabe, M [ doi:10.1016/S0927-0248(02)00148-4 ] "Improvement of SiO2/SiC interface properties by nitrogen radical irradiation," Jpn. J. Appl. Phys., Vol.42, No.6A, pp.L575-L577, 2003., 1 Oct. 2003 Maeyama, Y, Yano, H, Furumoto, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.L575 ] "Passivation effect of plasma chemical vapor deposited SiNx on single-crystalline silicon thin-film solar cells," Jpn. J. Appl. Phys., 42, pp.5135-5139, 2003., 1 Oct. 2003 Yamamoto, Y, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.5135 ] "Effects of nitrogen radical irradiation on performance of SiC MOSFETs," Materials Science Forum, Vols.433-436, pp.945-948, 2003, 1 Oct. 2003 Yano, H, Maeyama, Y, Furumoto, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.433-436.945 ] "Reliability of low-temperature poly-Si thin film transistors with lightly doped drain structures," Jpn. J. Appl. Phys., Vol.42, pp.4257-4260, 2003., 1 Oct. 2003 Furuta, M, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.4257 ] "Reliability of low-temperature poly-Si thin-film transistors," Solid State Phenomena Vol.93, pp.43-48, 2003., 1 Oct. 2003 Inoue, Y, Ogawa, H, Endo, T, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/SSP.93.43 ] "Novel method for making nanodot arrays using a cage-like protein," Jpn. J. Appl. Phys. Vol.42, pp.L.398-399, 2003, 1 Oct. 2003 Hikono, T, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.1143/JJAP.42.L398 ] "Hot carrier effect in low-temperature poly-silicon p-channel thin-film transistors," Solid State Phenomena Vol.93, pp.31-36, 2003., 1 Oct. 2003 Nakagawa, H, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Morita, Y [ doi:10.4028/www.scientific.net/SSP.93.31 ] "Analysis of hot carrier effect in low-temperature poly-Si gate-overlapped lightly doped drain thin film transistors," Jpn. J. Appl. Phys. Vol.42, pp.3354-3360, 2003, 1 Oct. 2003 Kawakita, T, Nakagawa, H, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.3354 ] "Field Effect analysis of PV system output characteristics fcusing on module temperature," Solar Energy Materials & Solar Cells 75, pp.665-671, 2003., 1 Oct. 2003 K.Nishioka, T.Hatayama, Y.Uraoka, T.Fuyuki, R.Hagihara, M.watanabe "Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope," IEEE Elecron Device Letters, Vol.24, No.4, pp.236-238, 2003, 1 Oct. 2003 Uraoka, Y, Hirai, N, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1109/LED.2003.810877 ] "Evaluation of recombination velocity at grain boundaries in poly-Si solar cells with laser beam induced current," Solid State Phenomena Vol.93, pp.351-354, 2003., 1 Oct. 2003 Sakitani, N, Nishioka, K, Yagi, T, Yamamoto, Y, Ishikawa, Y, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/SSP.93.351 ] "Nano-etching using nanodots mask fabricated by bio-nano-process," Journal of Photopolymer Science and Technology”, Vol.16, No.3, pp.439-444, 2003., 1 Oct. 2003 Yamazaki, G, Uraoka, Y, Fuyuki, T, Yamashita, I [ doi:10.2494/photopolymer.16.439 ] "Analysis of P/N junction Profiles by Electron Beam Induced Current Towards High Efficiency Thin-Film Poly-Si Solar Cells," 3rd World Conference on Photovoltaic Conversion, May. 2003 T. Yamazaki, Y. Ishikawa, Y. Uraoka, T. Fuyuki "Nucleation Control Towards the Poly-Si Thin Films with Large Grain Size Utilizing Intermittent Supply of Dichlorosilane," 3rd World Conference on Photovoltaic Conversion, pp4LN, May. 2003 Y. Ishikawa, Y. Uraoka, T. Fuyuki "Analysis of the temperature characteristics in polycrystalline Si solar cells using modified equivalent circuit model," Jpn. J. Appl. Phys., vol.42, no.12, pp7175, 1 Apr. 2003 Nishioka, K, Sakitani, N, Kurobe, K, Yamamoto, Y, Ishikawa, Y, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.7175 ] "Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope," IEEE Electron Device Lett, vol.24, no.4, pp236, 1 Apr. 2003 Uraoka, Y, Hirai, N, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1109/LED.2003.810877 ] "Nucleation control by intermittent supply of dichlorosilane towards the fabrication of polycrystalline silicon thin films with large grain size," Jpn. J. Appl. Phys., vol.42, no.11, pp6759, 1 Apr. 2003 Ishikawa, Y, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.42.6759 ] "Hot carrier effect in low-temperature poly-Si p-ch thin-film transistors under dynamic stress," Jpn, J.Appl. Phys. Vol.41, pp.L13-L16, 2002., 1 Oct. 2002 Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.41.L13 ] "Comprehensive study on reliability of low-temperature poly-Si thin-film transistors under dynamic complimentary metal-oxide semiconductor operations," Jpn. J. Appl. Phys., Vol.41, pp.2414-2418, 2002, 1 Oct. 2002 Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.41.2414 ] "Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon P-channel thin film transistors," Jpn. J. Appl. Phys., Vol.41, pp.5894-5899, 2002, 1 Oct. 2002 Uraoka, Y, Morita, Y, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.41.5894 ] "Low temperature nitridation of Si oxide utilizing activated nitrogen," Jpn. J. Appl. Phys., Vol.41, pp3637-3642, 2002, 1 Oct. 2002 Uraoka, Y, Yano, H, Hatayama, T, Fuyuki, T [ doi:10.1143/JJAP.41.3637 ] "Reliability of low temperature poly-Si GOLD (gate-overlapped LDD) structure TFTs," IEICE Trans Electron. Vol.E85-C, No.11, 2002., 1 Oct. 2002 Kawakita, T, Nakagawa, H, Uraoka, Y, Fuyuki, T "Improvement of SiO2/alpha-SiC interface properties by nitrogen radical treatment," Mater. Sci. Forum, Vols.389-393, pp.997-1000, 2002., 1 Oct. 2002 Maeyama, Y, Yano, H, Hatayama, T, Uraoka, Y, Fuyuki, T, Shirafuji, T "Accurate Evaluation of Minority Carrier Diffusion Length in Thin Film Single Crystalline Silicon Solar Cells," 29th IEEE Photovoltaic Specialists Conference, pp235, May. 2002 Y. Yamamoto, Y. Ishikawa, K. Nishioka, Y. Uraoka, T. Fuyuki "Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition," Sol. Energy Mater. Sol. Cell, vol.74, pp255, 1 Apr. 2002 Ishikawa, Y, Yamamoto, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1016/S0927-0248(02)00081-8 ] "Numerical analysis of bulk diffusion length in thin-film c-Si solar cells," Sol. Energy Mater. Sol. Cell, vol.75, pp433, 1 Apr. 2002 Yamamoto, Y, Ishikawa, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1016/S0927-0248(02)00193-9 ] "電子線起電流法による薄膜多結晶Si太陽電池の接合評価," 電子情報通信学会　シリコン材料・デバイス研究会, pp7, 2002.4.1 山崎努, 石河泰明, 浦岡行治, 冬木隆 "Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current," International Conference on Polycrystalline Semiconductors, pp18, 1 Apr. 2002 N. Sakitani, K. Nishioka, T. Yagi, Y.Yamamoto, Y. Ishikawa, Y. Uraoka, T. Fuyuki "EBIC法を使用した薄膜多結晶Si太陽電池のP/Nジャンクションプロファイル解析," 第十回「高効率太陽電池および太陽光発電システム」ワークショップ, pp94, 2002.4.1 山崎努, 石河泰明, 浦岡行治, 冬木隆 "Aluminum Induced Crystallization法を利用した多結晶Si薄膜の形成と評価," 電子情報通信学会　シリコン材料・デバイス研究会, pp19, 2002.4.1 中村敦, 石河泰明, 畑山智亮, 矢野裕司, 浦岡行治, 冬木隆 "Effects of thermal annealing on Cu/6H-SiC Schottky properties," Mat. Sci. Forum, Vol.353-356, pp.615-618, 2001., 1 Oct. 2001 Hatayama, T, Suezaki, T, Kawahito, K, Uraoka, Y, Fuyuki, T [ doi:10.4028/www.scientific.net/MSF.353-356.615 ] "Electrical properties and thermal stability of Cu/6H-SiC junctions," Jpn. J. Appl. Phys., Vol.40, L43-L45, 2001., 1 Oct. 2001 Suezaki, T, Kawahito, K, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.40.L43 ] "Hot carrier effects in low-temperature polysilicon thin-film transistors," Japanese Journal of Applied Physics, Vol. 40, pp.2833-2836, 2001, 1 Oct. 2001 Uraoka, Y, Hatayama, T, Fuyuki, T, Kawamura, T, Tsuchihashi, Y [ doi:10.1143/JJAP.40.2833 ] "Analysis of hot carrier effect in low-temperature poly-Si thin-film transistors towards high reliability," Solid State Phenomena, Vols.80-81, pp.349-360, 2001., 1 Oct. 2001 Fuyuki, T, Uraoka, Y [ doi:10.4028/www.scientific.net/SSP.80-81.349 ] "Analysis of device performance by quasi three-dimensional simulation for thin film polycrystalline silicon solar cells with columnar structure," Jpn. J. Appl. Phys., Vol.40, pp.6783-6787, 2001, 1 Oct. 2001 Ishikawa, Y, Yamamoto, Y, Hatayama, T, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.40.6783 ] "Reliability of low temperature poly-silicon TFTs under inverter operation," IEEE　Trans Electron Device Vol.48, No.10, pp.2370-2374, 2001, 1 Oct. 2001 Uraoka, Y, Hatayama, T, Fuyuki, T, Kawamura, T, Tsuchihashi, Y [ doi:10.1109/16.954479 ] "Optimum designing of single crystalline silicon thin film solar cells with graded active layer," Jpn. J. Appl. Phys., vol.40, no.12, pp6778, 1 Apr. 2001 Yamamoto, Y, Ishikawa, Y, Uraoka, Y, Fuyuki, T [ doi:10.1143/JJAP.40.6778 ] "Numerical Analysis of Bulk Diffusion Length in Thin Film c-Si Solar Cells," 12th International Photovoltaic Science and Engineering, pp147, 1 Apr. 2001 Y. Yamamoto, Y. Ishikawa, K. Nishioka, Y. Uraoka, T. Fuyuki "Reliability of high-frequency operation of low-temperature polysilicon thin film transistors under dynamic stress," Jpn.J. Appl. Phys., Vol.39, L1209-L1212, 2000, 1 Oct. 2000 Uraoka, Y, Hatayama, T, Fuyuki, T, Kawamura, T, Tsuchihashi, Y [ doi:10.1143/JJAP.39.L1209 ] "擬三次元シミュレーションによる薄膜多結晶シリコン太陽電池の動作解析," 第八回「高効率太陽電池および太陽光発電システム」ワークショップ, pp93, 2000.4.1 石河泰明, 山本幸枝, 畑山智亮, 浦岡行治, 冬木隆 "Correlating charge-to-breakdown with constant-current injection to gate oxide lifetime under constant-voltage stress," 調査中, 1 Oct. 1996 Eriguchi, K, Uraoka, Y [ doi:10.1143/JJAP.35.1535 ] "PLASMA-INDUCED TRANSCONDUCTANCE DEGRADATION OF NMOSFET WITH THIN GATE OXIDE," IEICE Trans. Electron. Vol E78-C, No.3, pp.261, 1995, 1 Oct. 1995 ERIGUCHI, K, ARAI, M, URAOKA, Y, KUBOTA, M "EVALUATION TECHNIQUE OF GATE OXIDE DAMAGE," IEEE Trans. Semiconductor Manufacturing, Vol.7, No.3, pp.293, 1994, 1 Oct. 1994 URAOKA, Y, ERIGUCHI, K, TAMAKI, T, TSUJI, K [ doi:10.1109/66.311332 ] "New Evaluation of Gate Oxide Damage by Plasma Processing," IEEE Electron Device Letters, Vol.16, No.5, 1994, 1 Oct. 1994 K.Eriguchi, Y.Uraoka "FAILURE ANALYSIS OF ULSI CIRCUITS USING PHOTON-EMISSION," IEEE Trans. Semiconductor Manufacturing, Vol.6, No.4, pp.324, 1993, 1 Oct. 1994 URAOKA, Y, MIYANAGA, I, TSUJI, K, AKIYAMA, S [ doi:10.1109/66.267642 ] "DEGRADATION PHENOMENON UNDER LOW DRAIN VOLTAGE STRESS IN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS," Jpn. J. Appl. Phys. Vol.33, pp.856, 1994, 1 Oct. 1994 MORII, T, MURAI, R, URAOKA, Y, TSUJI, K [ doi:10.1143/JJAP.33.678 ] "QUANTITATIVE-EVALUATION OF GATE OXIDE DAMAGE DURING PLASMA PROCESSING USING ANTENNA-STRUCTURE CAPACITORS," Jpn. J.Appl. Phys. Vol.33, pp.83,1994, 1 Oct. 1994 ERIGUCHI, K, URAOKA, Y, NAKAGAWA, H, TAMAKI, T, KUBOTA, M, NOMURA, N [ doi:10.1143/JJAP.33.83 ] "PHOTON-ENERGY DISTRIBUTION OF HOT-CARRIER PHOTOEMISSION FROM LOCOS AND TRENCH-ISOLATED MOSFETS," Sold-State Electronics, Vol.37, pp.1421, 1994, 1 Oct. 1994 OHZONE, T, IWATA, H, URAOKA, Y, ODANAKA, S [ doi:10.1016/0038-1101(94)90201-1 ] "HOT-CARRIER EVALUATION OF MOSFETS IN ULSI CIRCUITS USING THE PHOTON-EMISSION METHOD," IEEE Trans. Electron Device., Vol.40, No.8, pp.1426, 1993, 1 Oct. 1993 URAOKA, Y, TSUTSU, N, MORII, T, TSUJI, K [ doi:10.1109/16.223701 ] "A NEW TECHNIQUE FOR EVALUATING GATE OXIDE RELIABILITY USING A PHOTON-EMISSION METHOD," IEEE Trans. Semiconductor Manufacturing, Vol.40, No.8, pp.1426, 1993, 1 Oct. 1993 URAOKA, Y, TSUJI, K "PHOTON SPECTRUM ANALYSIS OF HOT CARRIER DEGRADATION IN NMOSFETS," Semiconductor Science and Technology, No.7, pp.576, 1992, 1 Oct. 1992 URAOKA, Y, TSUTSU, N, AKIYAMA, S "EVALUATION TECHNOLOGY OF VLSI RELIABILITY USING HOT CARRIER LUMINESCENCE," IEEE Trans. Semiconductor Manufacturing, Vol.4, No.3, pp.183, 1991, 1 Oct. 1991 URAOKA, Y, TSUTSU, N, NAKATA, Y, AKIYAMA, S [ doi:10.1109/66.85938 ]
受賞	"Best Poster Award," 19th International Thin-Film Transistor Conference, 2025.3.26 Hikaru Hoshikawa, 髙橋　崇典, Yukiharu Uraoka "Best Poster Award," 18th International Thin-Film Transistor Conference, 29 Mar. 2024 Nu Myat Thazin, Bermundo Juan Paolo Soria, Umu Hanifah, Johannes Richter, Sebastian Geburt, Yukiharu Uraoka "IEEE Fellow," IEEE, 1 Jan. 2024 Yukiharu Uraoka "IMFEDK 2023 Poster Award," IEEE, 17 Nov. 2023 Masaki Matsumoto, Ryoya Atsumi, Mami N. Fujii, Yuta Miyagoshi, Takumi Tsuno, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Mutsunori Uenuma, Yukiharu Uraoka, Tomohiro Matsushita, Yukako Kato "Best Poster Award," The 23rd International Meeting on Information Display (IMID 2023), 23 Aug. 2023 Candell Grace Quino, Bermundo Juan Paolo Soria, Yukiharu Uraoka "Student Paper Award," AMFPD 23, 4 Jul. 2023 Umu Hanifah, Bermundo Juan Paolo Soria, Mutsunori Uenuma, 浦岡　行治 "第53回 (2022年秋季) 応用物理学会講演奨励賞," 応用物理学会, 2023.3.15 髙橋　崇典, 上沼睦典, 小林正治, 浦岡　行治 "優秀ポスター賞," 第19回日本熱電学会学術講演会, 2022.8.10 前田俊光, 石田翔麻, 榎本康生, 浦岡行治 "Outstanding Poster Paper Award," The 2021 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021), 18 Nov. 2021 Aimi Syairah Safaruddin, Bermundo Juan Paolo Soria, Atsuko Yamamoto, Mutsunori Uenuma, Yukiharu Uraoka "2021年秋季大会日本物理学会学生優秀発表賞," 日本物理学会 2021年秋季大会 , 2021.10.9 田中晶貴, 橋本　由介, 古賀峻丞, 竹内走一郎, 孫澤旭, 津野拓海, 吉井大陸, 上沼　睦典, 浦岡　行治, 藤井茉美, 室隆桂之, 松下　智裕 "第42回（2020年度）応用物理学会論文奨励賞," 応用物理学会, 2020.9 Takanori Takahashi, Ryoko Miyanaga, Mami Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Juan Paolo Bermundo, Yasuaki Ishikawa, Yukiharu Uraoka "APEX/JJAP Editorial Contribution Award," The Japan Society of Applied Physics, 2019.3.9 浦岡　行治 "Student award," International Workshop on Nitride Semiconductors　2018, 16 Nov. 2018 Yuta Fujimoto, Mutsunori Uenuma, Hiroshi Ota, Fumihiko Matsui, Yasuaki Ishikawa, Yukiharu Uraoka "Student paper award," 薄膜材料デバイス研究会第15回研究集会, 2018.11.10 梅田鉄馬, 上沼　睦典, 藤本裕太, 石河　泰明, 浦岡　行治, 足立　秀明 "Best Presenter Award," 1st International Conference on Materials Science and Engineering in the Philippines (ICMSEP 2018), 26 Oct. 2018 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka "優秀講演賞," 第15回日本熱電学会学術講演会, 2018.9.15 梅田鉄馬, 上沼　睦典, 藤本裕太, 石河　泰明, 木村睦, 浦岡　行治, 足立　秀明 "アモルファス酸化物薄膜のトランスバース型フレキシブル熱電変換素子," 第65回応用物理学会春季学術講演会, 2018.3.18 梅田鉄馬, 上沼　睦典, 瀬名波大貴, Felizco Jenichi, 石河　泰明, 浦岡　行治, 足立　秀明 "奨励賞," 第27回日本MRS年次大会, 2017.12.7 髙橋崇典, 宝賀剛, 宮永良子, 藤井　茉美, 浦岡　行治, 内山潔 "Outstanding Poster Paper Award," International Display Workshops, Nov. 2017 Daisuke Matsuo, Ryoko Miyanaga, Shigeaki Kishida, Yoshitaka Setoguchi, Yasunori Andoh, Mami Fujii, Yukiharu Uraoka "ゲートおよびドレイン電界印加による非晶質IGZO薄膜トランジスタの微小発光現象," 薄膜材料デバイス研究会第14回研究集会, 2017.10.21 藤井　茉美, Bermundo Juan Paolo Soria, 石河　泰明, 浦岡　行治 "Effect of Cation Substitution for Low-Illuminance Characteristics of Perovskite Solar Cells," 11th Aseanian Conference on Nano-Hybrid Solar Cells, 10 Oct. 2017 Itaru Raifuku, Yasuaki Ishikawa, Seigo Ito, Yukiharu Uraoka, Peter Chen "ポスター賞," 第78回応用物理学会秋季学術講演会, 2017.9.6 藤本裕太, 上沼　睦典, 太田紘志, 松井　文彦, 石河　泰明, 浦岡　行治 "Poster Award," The 17th International Meeting on Information Display, 31 Aug. 2017 Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Mami Fujii, Hiroshi Ikenoue, Yukiharu Uraoka "Student Paper Award," EM-NANO2017, 21 Jun. 2017 Dianne Corsino, Bermundo Juan Paolo Soria, Kiyoshi Takahashi, Yasuaki Ishikawa, Yukiharu Uraoka "応用物理学会フェロー," 応用物理学会秋季講演会, 2016.9.16 浦岡　行治 "ポスター賞," 応用物理学会, 2016.9.14 木瀬香保利, 藤井　茉美, Bermundo Juan Paolo Soria, 石河　泰明, 浦岡　行治 "Student Paper Award," International Workshop on Active-Matrix FlatPanel　Displays and Devices, 2016, Jul. 2016 Kahori Kise, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka "Student Paper Award," IMFEDKD2016 , 23 Jun. 2016 Itaru Raifuku, Yasuaki Ishikawa, Seigo Ito, Yukiharu Uraoka "Young paper award," IEEE International Meeting for Future of Electron Devices, Kansai , Jun. 2016 Itaru Raifuku, Yasuaki Ishikawa, Seigo Ito, Yukiharu Uraoka "若手奨励賞," 第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム, 2016.2 橋間裕貴, 石河　泰明, 上沼　睦典, 岡本尚文, 山下一郎, 浦岡　行治 "Outstanding Poster Paper Award," International Display Workshops, Dec. 2015 Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Bermundo Juan Paolo Soria, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka "Outstanding Poster Paper Award," International Display Workshops 2015, Dec. 2015 Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami Fujii, Haruka Yamazaki, Bermundo Juan Paolo Soria, Yukiharu Uraoka "講演奨励賞," 応用物理学会, 2015.9.15 浦川哲, 石河　泰明, 長田至弘, 藤井　茉美, 浦岡　行治 "Student Paper Award," The 22nd International Workshop on Active-Matrix Flat-panel Display and Devices, 1 Jul. 2015 Yana Mulyana, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "The International Thermoelectric Society (ITS) Poster Awards," 34th Annual International Conference on Thermoelectrics(ICT 2015) and 13th European Conference on Thermoelectrics (ECT 2015), 28 Jun. 2015 Yuta Fujimto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka "ナノ粒子埋込V溝型Junction-less FETにおけるメモリ効果発現と評価," ゲートスタック研究会-材料・プロセス・評価の物理- 第20回研究会, 2015.1.31 番貴彦, 上沼睦典, 石河泰明, 浦岡行治, 山下一郎, 岡本尚文, 右田真司 "Poster Award," The 21st International Display Workshop, 5 Dec. 2014 Satoshi Urakawa, Yasuaki Ishikawa, Yukihiro Osada, Mami Fujii, Masahiro Horita, Yukiharu Uraoka "AM-FPD '13 Poster Award," 20th International Workshop on Active-Matrix Flatpanel Displays and Devices, 2 Jul. 2014 Satoshi Urakawa, Shigekazu Tomai, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Mutsumi Kimura, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "IEEE EDS Kansai Chapter IMFEDK Best Paper Award ," 2014 International Meeting for Future of Electron Devices, Kansai, 20 Jun. 2014 Chaiyanan Kulchaisit, Mami Fujii, Yoshihiro Ueoka, Bermundo Juan Paolo Soria, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "2013年　応用物理学会秋季学術講演会　Poster Award," 第74回応用物理学会秋季学術講演会, 2013.9.17 冨川崇, 熊谷慎也, 山下一郎, 浦岡行治, 佐々木実 "第35回（2013年秋季）応用物理学会講演奨励賞受賞," 第74回応用物理学会秋季学術講演会, 2013.9.17 上岡義弘, 石河泰明, Bermundo Juan Paolo Soria, 山﨑はるか, 浦川哲, 長田至弘, 堀田昌宏, 浦岡行治 "講演奨励賞," 応用物理学会秋季講演会, 2013.9.16 山崎はるか, 石河　泰明, 上岡義弘, 浦川哲, 藤原将喜, 高橋英治, 安東靖典, 浦岡　行治 "Student Paper Award," International Meeting for Future of Electron Devices, Kansai, 6 Jun. 2013 Keisuke Kado, Mutsunori Uenuma, Takahiko Ban, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka "Best Paper Award (Active-Matrix)," International Display Workshops, 5 Feb. 2013 Haruka Yamazaki, Yasuaki Ishikawa, Yoshihiro Ueoka, Masaki Fujiwara, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka "Best Paper Award (Flexible Display)," International Display Workshops, 5 Feb. 2013 Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Tetsuo Okuyama, Hiroshi Ikenoue "Student Pape Award," Active-Matrix Flat Panel Displays and Devices, 15 Oct. 2012 Yumi Kawamura, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka "Best Poster Award," Active-Matrix Flat Panel Displays and Devices, 15 Oct. 2012 Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue "Young Researcher Award," International Conference on Solid State Devices and Materials, 25 Oct. 2011 Mami Fujii, Yasuaki Ishikawa, Masahiro Horita, Yukiharu Uraoka
所属学協会	日本応用物理学会

資料

他の研究者

Bermundo Juan Paolo Soria

職位	助教
領域	物質創成科学領域基幹研究室
研究室	情報機能素子科学ディスプレイ、メモリ、ＬＳＩなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。

高橋　崇典

職位	助教
領域	物質創成科学領域基幹研究室
研究室	情報機能素子科学ディスプレイ、メモリ、ＬＳＩなど、次世代の情報機能をもつ半導体素子、電子デバイスの研究を行う。また、高効率な太陽電池や熱電変換素子など、エナジーハーべスティングのキーデバイスを薄膜技術を駆使して実現する。