学術論文 |
- "Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations," Applied Physics Letters, vol.122, pp262903, 29 Jun. 2023
- Yosuke Harashima, Hiroaki Koga, Zeyuan Ni, Takehiro Yonehara, Michio Katouda, Akira Notake, Hidefumi Matsui, Tsuyoshi Moriya, Mrinal Kanti Si, Ryu Hasunuma, Akira Uedono, Yasuteru Shigeta
[ doi:10.1063/5.0153188 ]
- "物質科学のためのデータ同化," 化学工学, vol.87, pp248-251, 2023.6
- 原嶋 庸介, 藤井 幹也
- "物質科学のためのデータ同化," 化学工学, vol.87, 2023.5.30
- 原嶋 庸介, 藤井 幹也
- "Extrapolation performance improvement by quantum chemical calculations for machine-learning-based predictions of flow-synthesized binary copolymers," Digital Discovery, vol.2, pp809-818, 8 May. 2023
- Takayama Tomoaki, TAKASUKA Shogo, Yosuke Harashima, Mikiya Fujii, Tomoyuki Miyao, Hiroharu Ajiro, Shunto Oikawa, Takayoshi Yoshimura, Sho Ito, Shigehito Asano, Akira Kurosawa, Tetsunori Sugawara, Miho Hatanaka, Takamitsu Matsubara, Yu-ya Ohnishi
[ doi:10.1039/D2DD00144F ]
- "Effect of MgO Grain Boundaries on the Interfacial Perpendicular Magnetic Anisotropy in Spin-Transfer Torque Magnetic Random Access Memory: A First-Principles Study," IEEE Transactions on Magnetics, vol.59, pp4, 23 Feb. 2023
- Keisuke Morishita, Yosuke Harashima, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi
- "Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation," 2022 International Symposium on Semiconductor Manufacturing (ISSM), 12 Dec. 2022
- Akira Uedono, Naomichi Takahashi, Ryu Hasunuma, Yosuke Harashima, Yasuteru Shigeta, Zeyuan Ni, Hidefumi Matsui, Akira Notake, Atsushi Kubo, Tsuyoshi Moriya, Koji Michishio, Nagayasu Oshima, Shoji Ishibashi
[ doi:10.1109/ISSM55802.2022.10027133 ]
- "Systematic search for stabilizing dopants in ZrO2 and HfO2 using first-principles calculations," IEEE Transactions on Semiconductor Manufacturing, 12 Dec. 2022
- Yosuke Harashima, Hiroaki Koga, Zeyuan Ni, Takehiro Yonehara, Michio Katouda, Akira Notake, Hidefumi Matsui, Tsuyoshi Moriya, Mrinal Kanti Si, Ryu Hasunuma, Akira Uedono, Yasuteru Shigeta
[ doi:10.1109/TSM.2023.3265658 ]
- "Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams," Thin Solid Films, vol.762, pp139557, 27 Oct. 2022
- Akira Uedono, Takahashi Naomichi, Ryu Hasunuma, Yosuke Harashima, Yasuteru Shigeta, Zeyuan Ni, Hidefumi Matsui, Akira Notake, Atsushi Kubo, Tsuyoshi Moriya, Koji Michishio, Nagayasu Oshima, Shoji Ishibashi
- "First-principles study on the stability of (R, Zr)(Fe, Co, Ti)12 against 2-17 and unary phases (R = Y, Nd, Sm)," Physical Review Materials, vol.6, pp054404, 9 May. 2022
- Taro Fukazawa, Yosuke Harashima, Takashi Miyake
[ doi:10.1103/PhysRevMaterials.6.054404 ]
- "電子論で探るNd-Fe-B磁石主相における軽元素の役割," 日本磁気学会 会報「まぐね」, vol.17, pp102-108, 2022.4.1
- 立津慶幸, 原嶋庸介, 三宅隆, 合田義弘
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受賞 |
- "ISSM 2022 Best Papers Award," International Symposium on Semiconductor Manufacturing 2022 (ISSM 2022), 13 Dec. 2022
- Yosuke Harashima, Hiroaki Koga, Zeyuan Ni, Takehiro Yonehara, Michio Katouda, Akira Notake, Hidefumi Matsui, Tsuyoshi Moriya, Mrinal Kanti Si, Ryu Hasunuma, Akira Uedono, Yasuteru Shigeta
- "ISSM 2022 Best Papers Award," International Symposium on Semiconductor Manufacturing 2022 (ISSM 2022), 13 Dec. 2022
- Akira Uedono, Naomichi Takahashi, Ryu Hasunuma, Yosuke Harashima, Yasuteru Shigeta, Zeyuan Ni, Hidefumi Matsui, Akira Notake, Atsushi Kubo, Tsuyoshi Moriya, Koji Michishio, Nagayasu Oshima, Shoji Ishibashi
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